Abstract
A microscopic treatment of the influence of electron-hole-scattering on the optical dephasing and the lineshape in semiconductor gain media is presented. The calculations incorporate non-diagonal- and diagonal-scattering contributions to the optical polarisation. The strong compensation between both contributions leads to gain spectra, which are significantly modified in comparison to those obtained using a pure dephasing approximation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 555-559 |
| Number of pages | 5 |
| Journal | Solid State Communications |
| Volume | 100 |
| Issue number | 8 |
| DOIs | |
| State | Published - Nov 1996 |
Keywords
- A. semiconductors
- B. carrier-carrier interaction
- B. optical properties
ASJC Scopus subject areas
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry