The influence of electron-hole-scattering on the gain spectra of highly excited semiconductors

S. Hughes; A. Knorr; S. W. Koch; R. Binder; R. Indik; J. V. Moloney

doi:10.1016/0038-1098(96)00494-2

The influence of electron-hole-scattering on the gain spectra of highly excited semiconductors

S. Hughes, A. Knorr, S. W. Koch, R. Binder, R. Indik, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

A microscopic treatment of the influence of electron-hole-scattering on the optical dephasing and the lineshape in semiconductor gain media is presented. The calculations incorporate non-diagonal- and diagonal-scattering contributions to the optical polarisation. The strong compensation between both contributions leads to gain spectra, which are significantly modified in comparison to those obtained using a pure dephasing approximation.

Original language	English (US)
Pages (from-to)	555-559
Number of pages	5
Journal	Solid State Communications
Volume	100
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(96)00494-2
State	Published - Nov 1996

Keywords

A. semiconductors
B. carrier-carrier interaction
B. optical properties

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(96)00494-2

Cite this

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abstract = "A microscopic treatment of the influence of electron-hole-scattering on the optical dephasing and the lineshape in semiconductor gain media is presented. The calculations incorporate non-diagonal- and diagonal-scattering contributions to the optical polarisation. The strong compensation between both contributions leads to gain spectra, which are significantly modified in comparison to those obtained using a pure dephasing approximation.",

keywords = "A. semiconductors, B. carrier-carrier interaction, B. optical properties",

author = "S. Hughes and A. Knorr and Koch, {S. W.} and R. Binder and R. Indik and Moloney, {J. V.}",

year = "1996",

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pages = "555--559",

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T1 - The influence of electron-hole-scattering on the gain spectra of highly excited semiconductors

AU - Hughes, S.

AU - Knorr, A.

AU - Koch, S. W.

AU - Binder, R.

AU - Indik, R.

AU - Moloney, J. V.

PY - 1996/11

Y1 - 1996/11

N2 - A microscopic treatment of the influence of electron-hole-scattering on the optical dephasing and the lineshape in semiconductor gain media is presented. The calculations incorporate non-diagonal- and diagonal-scattering contributions to the optical polarisation. The strong compensation between both contributions leads to gain spectra, which are significantly modified in comparison to those obtained using a pure dephasing approximation.

AB - A microscopic treatment of the influence of electron-hole-scattering on the optical dephasing and the lineshape in semiconductor gain media is presented. The calculations incorporate non-diagonal- and diagonal-scattering contributions to the optical polarisation. The strong compensation between both contributions leads to gain spectra, which are significantly modified in comparison to those obtained using a pure dephasing approximation.

KW - A. semiconductors

KW - B. carrier-carrier interaction

KW - B. optical properties

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U2 - 10.1016/0038-1098(96)00494-2

DO - 10.1016/0038-1098(96)00494-2

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SP - 555

EP - 559

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 8

ER -

The influence of electron-hole-scattering on the gain spectra of highly excited semiconductors

Abstract

Keywords

ASJC Scopus subject areas

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