Tertiarybutylarsine as a substitute for AsH3: Application to InGaAs/InP photonic integrated circuits

B. I. Miller; M. G. Young; U. Koren; T. L. Koch; M. Oron; R. P. Gnall; J. E. Zucker; K. E. Jones; F. Hernandez-Gil; J. L. DeMiguel

Tertiarybutylarsine as a substitute for AsH₃: Application to InGaAs/InP photonic integrated circuits

B. I. Miller, M. G. Young, U. Koren, T. L. Koch, M. Oron, R. P. Gnall, J. E. Zucker, K. E. Jones, F. Hernandez-Gil, J. L. DeMiguel

Optical Sciences, College of

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

It has been shown that bulk layers of InGaAs and InGaAsP grown using tertiarybutylarsine (TBA) have nearly as good electrical and optical properties as AsH₃-grown layers. As a consequence conventional InGaAsP lasers at 1.3 μm were grown by TBA and were found to have properties as good as those of AsH₃ lasers. Investigations into other components of PIC circuits grown by using TBA as substitute for AsH₃ are presented. Studies of multi-quantum-well (MQW) and strained-layer MQW lasers, a four-port directional coupler optical switch, and quantum-confined Stark effect modulator structures grown by this technique are reported. The components are intended for use in photonic integrated circuits. In all cases satisfactory performance is demonstrated.

Original language	English (US)
Pages	161-164
Number of pages	4
State	Published - 1990
Event	Second International Conference on Indium Phosphide and Related Materials - Denver, CO, USA Duration: Apr 23 1990 → Apr 25 1990

Other

Other	Second International Conference on Indium Phosphide and Related Materials
City	Denver, CO, USA
Period	4/23/90 → 4/25/90

ASJC Scopus subject areas

Engineering(all)

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Miller, B. I., Young, M. G., Koren, U., Koch, T. L., Oron, M., Gnall, R. P., Zucker, J. E., Jones, K. E., Hernandez-Gil, F., & DeMiguel, J. L. (1990). Tertiarybutylarsine as a substitute for AsH₃: Application to InGaAs/InP photonic integrated circuits. 161-164. Paper presented at Second International Conference on Indium Phosphide and Related Materials, Denver, CO, USA.

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abstract = "It has been shown that bulk layers of InGaAs and InGaAsP grown using tertiarybutylarsine (TBA) have nearly as good electrical and optical properties as AsH3-grown layers. As a consequence conventional InGaAsP lasers at 1.3 μm were grown by TBA and were found to have properties as good as those of AsH3 lasers. Investigations into other components of PIC circuits grown by using TBA as substitute for AsH3 are presented. Studies of multi-quantum-well (MQW) and strained-layer MQW lasers, a four-port directional coupler optical switch, and quantum-confined Stark effect modulator structures grown by this technique are reported. The components are intended for use in photonic integrated circuits. In all cases satisfactory performance is demonstrated.",

author = "Miller, {B. I.} and Young, {M. G.} and U. Koren and Koch, {T. L.} and M. Oron and Gnall, {R. P.} and Zucker, {J. E.} and Jones, {K. E.} and F. Hernandez-Gil and DeMiguel, {J. L.}",

year = "1990",

language = "English (US)",

pages = "161--164",

note = "Second International Conference on Indium Phosphide and Related Materials ; Conference date: 23-04-1990 Through 25-04-1990",

}

TY - CONF

T1 - Tertiarybutylarsine as a substitute for AsH3

T2 - Second International Conference on Indium Phosphide and Related Materials

AU - Miller, B. I.

AU - Young, M. G.

AU - Koren, U.

AU - Koch, T. L.

AU - Oron, M.

AU - Gnall, R. P.

AU - Zucker, J. E.

AU - Jones, K. E.

AU - Hernandez-Gil, F.

AU - DeMiguel, J. L.

PY - 1990

Y1 - 1990

N2 - It has been shown that bulk layers of InGaAs and InGaAsP grown using tertiarybutylarsine (TBA) have nearly as good electrical and optical properties as AsH3-grown layers. As a consequence conventional InGaAsP lasers at 1.3 μm were grown by TBA and were found to have properties as good as those of AsH3 lasers. Investigations into other components of PIC circuits grown by using TBA as substitute for AsH3 are presented. Studies of multi-quantum-well (MQW) and strained-layer MQW lasers, a four-port directional coupler optical switch, and quantum-confined Stark effect modulator structures grown by this technique are reported. The components are intended for use in photonic integrated circuits. In all cases satisfactory performance is demonstrated.

AB - It has been shown that bulk layers of InGaAs and InGaAsP grown using tertiarybutylarsine (TBA) have nearly as good electrical and optical properties as AsH3-grown layers. As a consequence conventional InGaAsP lasers at 1.3 μm were grown by TBA and were found to have properties as good as those of AsH3 lasers. Investigations into other components of PIC circuits grown by using TBA as substitute for AsH3 are presented. Studies of multi-quantum-well (MQW) and strained-layer MQW lasers, a four-port directional coupler optical switch, and quantum-confined Stark effect modulator structures grown by this technique are reported. The components are intended for use in photonic integrated circuits. In all cases satisfactory performance is demonstrated.

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Y2 - 23 April 1990 through 25 April 1990

ER -

Tertiarybutylarsine as a substitute for AsH₃: Application to InGaAs/InP photonic integrated circuits

Abstract

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