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Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Jifeng Liu
, Xiaochen Sun
, Dong Pan
, Xiaoxin Wang
, Lionel C. Kimerling
,
Thomas L. Koch
, Jürgen Michel
Research output
:
Contribution to journal
›
Article
›
peer-review
634
Scopus citations
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Dive into the research topics of 'Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si'. Together they form a unique fingerprint.
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Engineering
Gain Medium
100%
Tensiles
100%
Tensile Strain
66%
Engineering
33%
Band Structure
33%
Optical Gain
33%
Energy Difference
33%
Material Gain
33%
Laser Application
33%
Threshold Current Density
33%
Population Inversion
33%
Heterojunctions
33%
Conduction Band
33%
Absorption Loss
33%
Carrier Absorption
33%
Keyphrases
Laser Integration
100%
L-valley
40%
Heterojunction Structure
20%
Doping Engineering
20%
Double Heterojunction
20%
Edge Emitting
20%
Remaining Energy
20%
Material Science
Tensile Strain
100%
Heterojunction Structure
50%
Laser Application
50%
Earth and Planetary Sciences
Laser Application
100%