Temperature dependent electrical transport of disordered reduced graphene oxide

Baleeswaraiah Muchharla; T. N. Narayanan; Kaushik Balakrishnan; Pulickel M. Ajayan; Saikat Talapatra

doi:10.1088/2053-1583/1/1/011008

Temperature dependent electrical transport of disordered reduced graphene oxide

Baleeswaraiah Muchharla, T. N. Narayanan, Kaushik Balakrishnan, Pulickel M. Ajayan, Saikat Talapatra

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

96 Scopus citations

Abstract

We report on the simple route for the synthesis of chemically reduced graphene oxide (rGO) using ascorbic acid (a green chemical) as a reducing agent. Temperature- dependent electrical transport properties of rGO thin films have been studied in a wide range (50 K < T < 400 K) of temperature. Electrical conduction in rGO thin films was displayed in two different temperature regimes. At higher temperatures, Arrhenius-like temperature dependence of resistance was observed indicating a band gap dominating transport behavior. At lower temperatures, the rGO sample showed a conduction mechanism consistent with Mott's two-dimensional variable range hopping (2D-VRH). An unsaturated negative magnetoresistance (MR) was observed up to 3 T field. A decrease in negative MR at high temperatures is attributed to the phonon scattering of charge carriers.

Original language	English (US)
Article number	011008
Journal	2D Materials
Volume	1
Issue number	1
DOIs	https://doi.org/10.1088/2053-1583/1/1/011008
State	Published - Jun 1 2014

Keywords

Carbon
Electrical transport
Graphene
rGO

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1088/2053-1583/1/1/011008

Cite this

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title = "Temperature dependent electrical transport of disordered reduced graphene oxide",

abstract = "We report on the simple route for the synthesis of chemically reduced graphene oxide (rGO) using ascorbic acid (a green chemical) as a reducing agent. Temperature- dependent electrical transport properties of rGO thin films have been studied in a wide range (50 K < T < 400 K) of temperature. Electrical conduction in rGO thin films was displayed in two different temperature regimes. At higher temperatures, Arrhenius-like temperature dependence of resistance was observed indicating a band gap dominating transport behavior. At lower temperatures, the rGO sample showed a conduction mechanism consistent with Mott's two-dimensional variable range hopping (2D-VRH). An unsaturated negative magnetoresistance (MR) was observed up to 3 T field. A decrease in negative MR at high temperatures is attributed to the phonon scattering of charge carriers.",

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AU - Muchharla, Baleeswaraiah

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AU - Balakrishnan, Kaushik

AU - Ajayan, Pulickel M.

AU - Talapatra, Saikat

PY - 2014/6/1

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N2 - We report on the simple route for the synthesis of chemically reduced graphene oxide (rGO) using ascorbic acid (a green chemical) as a reducing agent. Temperature- dependent electrical transport properties of rGO thin films have been studied in a wide range (50 K < T < 400 K) of temperature. Electrical conduction in rGO thin films was displayed in two different temperature regimes. At higher temperatures, Arrhenius-like temperature dependence of resistance was observed indicating a band gap dominating transport behavior. At lower temperatures, the rGO sample showed a conduction mechanism consistent with Mott's two-dimensional variable range hopping (2D-VRH). An unsaturated negative magnetoresistance (MR) was observed up to 3 T field. A decrease in negative MR at high temperatures is attributed to the phonon scattering of charge carriers.

AB - We report on the simple route for the synthesis of chemically reduced graphene oxide (rGO) using ascorbic acid (a green chemical) as a reducing agent. Temperature- dependent electrical transport properties of rGO thin films have been studied in a wide range (50 K < T < 400 K) of temperature. Electrical conduction in rGO thin films was displayed in two different temperature regimes. At higher temperatures, Arrhenius-like temperature dependence of resistance was observed indicating a band gap dominating transport behavior. At lower temperatures, the rGO sample showed a conduction mechanism consistent with Mott's two-dimensional variable range hopping (2D-VRH). An unsaturated negative magnetoresistance (MR) was observed up to 3 T field. A decrease in negative MR at high temperatures is attributed to the phonon scattering of charge carriers.

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Temperature dependent electrical transport of disordered reduced graphene oxide

Abstract

Keywords

ASJC Scopus subject areas

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