Temperature dependent electrical transport of disordered reduced graphene oxide

Baleeswaraiah Muchharla, T. N. Narayanan, Kaushik Balakrishnan, Pulickel M. Ajayan, Saikat Talapatra

Research output: Contribution to journalArticlepeer-review

91 Scopus citations


We report on the simple route for the synthesis of chemically reduced graphene oxide (rGO) using ascorbic acid (a green chemical) as a reducing agent. Temperature- dependent electrical transport properties of rGO thin films have been studied in a wide range (50 K < T < 400 K) of temperature. Electrical conduction in rGO thin films was displayed in two different temperature regimes. At higher temperatures, Arrhenius-like temperature dependence of resistance was observed indicating a band gap dominating transport behavior. At lower temperatures, the rGO sample showed a conduction mechanism consistent with Mott's two-dimensional variable range hopping (2D-VRH). An unsaturated negative magnetoresistance (MR) was observed up to 3 T field. A decrease in negative MR at high temperatures is attributed to the phonon scattering of charge carriers.

Original languageEnglish (US)
Article number011008
Journal2D Materials
Issue number1
StatePublished - Jun 1 2014


  • Carbon
  • Electrical transport
  • Graphene
  • rGO

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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