Temperature-dependence of the internal efficiency droop in GaN-based diodes

J. Hader; J. V. Moloney; S. W. Koch

doi:10.1063/1.3658031

Temperature-dependence of the internal efficiency droop in GaN-based diodes

J. Hader, J. V. Moloney, S. W. Koch

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Abstract

The temperature dependence of the measured internal efficiencies of green and blue emitting InGaN-based diodes is analyzed. With increasing temperature, a strongly decreasing strength of the loss mechanism responsible for droop is found which is in contrast to the usually assumed behavior of Auger losses. However, the experimental observations can be well reproduced assuming density activated defect recombination with a temperature independent recombination time.

Original language	English (US)
Article number	181127
Journal	Applied Physics Letters
Volume	99
Issue number	18
DOIs	https://doi.org/10.1063/1.3658031
State	Published - Oct 31 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3658031

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title = "Temperature-dependence of the internal efficiency droop in GaN-based diodes",

abstract = "The temperature dependence of the measured internal efficiencies of green and blue emitting InGaN-based diodes is analyzed. With increasing temperature, a strongly decreasing strength of the loss mechanism responsible for droop is found which is in contrast to the usually assumed behavior of Auger losses. However, the experimental observations can be well reproduced assuming density activated defect recombination with a temperature independent recombination time.",

author = "J. Hader and Moloney, {J. V.} and Koch, {S. W.}",

note = "Funding Information: This work was supported by the U.S. Air Force Office of Scientific Research, contract FA9550-07-1-0573, the Deutsche Forschungsgemeinschaft and the Humboldt Foundation.",

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AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

N1 - Funding Information: This work was supported by the U.S. Air Force Office of Scientific Research, contract FA9550-07-1-0573, the Deutsche Forschungsgemeinschaft and the Humboldt Foundation.

PY - 2011/10/31

Y1 - 2011/10/31

N2 - The temperature dependence of the measured internal efficiencies of green and blue emitting InGaN-based diodes is analyzed. With increasing temperature, a strongly decreasing strength of the loss mechanism responsible for droop is found which is in contrast to the usually assumed behavior of Auger losses. However, the experimental observations can be well reproduced assuming density activated defect recombination with a temperature independent recombination time.

AB - The temperature dependence of the measured internal efficiencies of green and blue emitting InGaN-based diodes is analyzed. With increasing temperature, a strongly decreasing strength of the loss mechanism responsible for droop is found which is in contrast to the usually assumed behavior of Auger losses. However, the experimental observations can be well reproduced assuming density activated defect recombination with a temperature independent recombination time.

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Temperature-dependence of the internal efficiency droop in GaN-based diodes

Abstract

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