Temperature dependence of magnetotransport in extraordinary magnetoresistance devices

T. D. Boone; L. Folks; J. A. Katine; S. Maat; E. Marinero; S. Nicoletti; B. A. Gurney

doi:10.1109/TMAG.2006.879149

Temperature dependence of magnetotransport in extraordinary magnetoresistance devices

T. D. Boone, L. Folks, J. A. Katine, S. Maat, E. Marinero, S. Nicoletti, B. A. Gurney

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Extraordinary magnetoresistance (EMR) devices have been fabricated and characterized at various magnetic fields, operating temperatures, and current excitations. These devices are comprised of nonmagnetic high mobility semiconductors and low resistance metallic contacts and shunts. The resistance of the device is modulated by magnetic fields due to the Lorentz force steering an electron current between the high resistance semiconductor and the low resistance metallic shunt. The EMR devices were tested between 300 K and 5 K in magnetic fields up to 2 T perpendicular to the 2DEG plane and excitation currents up to 100 μA. Magnetoresistance increases as temperature decreases, potentially indicating that EMR persists even as dimensions approach the electron mean free path.

Original language	English (US)
Pages (from-to)	3270-3272
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	42
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2006.879149
State	Published - Oct 2006
Externally published	Yes

Keywords

Electromagnetic devices
extraordinary magnetoresistance
heterojunctions
magnetic sensors
semiconductor
semiconductor devices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2006.879149

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abstract = "Extraordinary magnetoresistance (EMR) devices have been fabricated and characterized at various magnetic fields, operating temperatures, and current excitations. These devices are comprised of nonmagnetic high mobility semiconductors and low resistance metallic contacts and shunts. The resistance of the device is modulated by magnetic fields due to the Lorentz force steering an electron current between the high resistance semiconductor and the low resistance metallic shunt. The EMR devices were tested between 300 K and 5 K in magnetic fields up to 2 T perpendicular to the 2DEG plane and excitation currents up to 100 μA. Magnetoresistance increases as temperature decreases, potentially indicating that EMR persists even as dimensions approach the electron mean free path.",

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year = "2006",

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AU - Boone, T. D.

AU - Folks, L.

AU - Katine, J. A.

AU - Maat, S.

AU - Marinero, E.

AU - Nicoletti, S.

AU - Gurney, B. A.

PY - 2006/10

Y1 - 2006/10

N2 - Extraordinary magnetoresistance (EMR) devices have been fabricated and characterized at various magnetic fields, operating temperatures, and current excitations. These devices are comprised of nonmagnetic high mobility semiconductors and low resistance metallic contacts and shunts. The resistance of the device is modulated by magnetic fields due to the Lorentz force steering an electron current between the high resistance semiconductor and the low resistance metallic shunt. The EMR devices were tested between 300 K and 5 K in magnetic fields up to 2 T perpendicular to the 2DEG plane and excitation currents up to 100 μA. Magnetoresistance increases as temperature decreases, potentially indicating that EMR persists even as dimensions approach the electron mean free path.

AB - Extraordinary magnetoresistance (EMR) devices have been fabricated and characterized at various magnetic fields, operating temperatures, and current excitations. These devices are comprised of nonmagnetic high mobility semiconductors and low resistance metallic contacts and shunts. The resistance of the device is modulated by magnetic fields due to the Lorentz force steering an electron current between the high resistance semiconductor and the low resistance metallic shunt. The EMR devices were tested between 300 K and 5 K in magnetic fields up to 2 T perpendicular to the 2DEG plane and excitation currents up to 100 μA. Magnetoresistance increases as temperature decreases, potentially indicating that EMR persists even as dimensions approach the electron mean free path.

KW - Electromagnetic devices

KW - extraordinary magnetoresistance

KW - heterojunctions

KW - magnetic sensors

KW - semiconductor

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Temperature dependence of magnetotransport in extraordinary magnetoresistance devices

Abstract

Keywords

ASJC Scopus subject areas

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