Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOX barriers

T. Newhouse-Illige; Y. H. Xu; Y. H. Liu; S. Huang; H. Kato; C. Bi; M. Xu; B. J. Leroy; W. G. Wang

doi:10.1063/1.5002586

Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdO_X barriers

T. Newhouse-Illige, Y. H. Xu, Y. H. Liu, S. Huang, H. Kato, C. Bi, M. Xu, B. J. Leroy, W. G. Wang

Physics

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Abstract

Perpendicular magnetic tunnel junctions with GdO_X tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdO_X barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlO_X and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

Original language	English (US)
Article number	072404
Journal	Applied Physics Letters
Volume	112
Issue number	7
DOIs	https://doi.org/10.1063/1.5002586
State	Published - Feb 12 2018

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOX barriers",

abstract = "Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.",

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T1 - Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOX barriers

AU - Newhouse-Illige, T.

AU - Xu, Y. H.

AU - Liu, Y. H.

AU - Huang, S.

AU - Kato, H.

AU - Bi, C.

AU - Xu, M.

AU - Leroy, B. J.

AU - Wang, W. G.

PY - 2018/2/12

Y1 - 2018/2/12

N2 - Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

AB - Perpendicular magnetic tunnel junctions with GdOX tunneling barriers have shown a unique voltage controllable interlayer magnetic coupling effect. Here, we investigate the quality of the GdOX barrier and the coupling mechanism in these junctions by examining the temperature dependence of the tunneling magnetoresistance and the interlayer coupling from room temperature down to 11 K. The barrier is shown to be of good quality with the spin independent conductance only contributing a small portion, 14%, to the total room temperature conductance, similar to AlOX and MgO barriers. The interlayer coupling, however, shows an anomalously strong temperature dependence including sign changes below 80 K. This non-trivial temperature dependence is not described by previous models of interlayer coupling and may be due to the large induced magnetic moment of the Gd ions in the barrier.

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Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdO_X barriers

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