TEM analysis of SIMOX produced by multiple implantation and annealing

Supapan Seraphin, Bernhard F. Cordts

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


The authors present a TEM (transmission electron microscopy) analysis of the structural evolution of SIMOX (separation by implanted oxygen) through three subsequent implantation/anneal cycles. Optimizing the process parameters on the basis of the TEM analysis resulted in a better understanding of the mechanisms of defect formation, and the reduction of defect density. The structural evolution of defects through the processing steps is described. A set of silicon (100) wafers was prepared in six steps with implantation and anneal alternating three times. The oxygen doses of the three implantation steps were 5 × 1017, 5 × 1017, and 8 × 1017 cm-2. All implantations were performed at 200 keV, 620°C, and at a current density of 1 mA/cm2. The anneals after each implant were carried out at 1300°C for 6 h in an argon atmosphere. After each implantation and anneal step the wafers were examined by TEM with a Philips 420 at 100 keV.

Original languageEnglish (US)
Title of host publication1991 IEEE International SOI Conference Proceedings
PublisherPubl by IEEE
Number of pages2
ISBN (Print)0780301846
StatePublished - 1992
Externally publishedYes
Event1991 IEEE International SOI Conference - Vail Valley, CO, USA
Duration: Oct 1 1991Oct 3 1991

Publication series

Name1991 IEEE International SOI Conference Proceedings


Other1991 IEEE International SOI Conference
CityVail Valley, CO, USA

ASJC Scopus subject areas

  • Engineering(all)


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