@inproceedings{88f3b62cd6ee4d178e88f2652805f622,
title = "TEM analysis of SIMOX produced by multiple implantation and annealing",
abstract = "The authors present a TEM (transmission electron microscopy) analysis of the structural evolution of SIMOX (separation by implanted oxygen) through three subsequent implantation/anneal cycles. Optimizing the process parameters on the basis of the TEM analysis resulted in a better understanding of the mechanisms of defect formation, and the reduction of defect density. The structural evolution of defects through the processing steps is described. A set of silicon (100) wafers was prepared in six steps with implantation and anneal alternating three times. The oxygen doses of the three implantation steps were 5 × 1017, 5 × 1017, and 8 × 1017 cm-2. All implantations were performed at 200 keV, 620°C, and at a current density of 1 mA/cm2. The anneals after each implant were carried out at 1300°C for 6 h in an argon atmosphere. After each implantation and anneal step the wafers were examined by TEM with a Philips 420 at 100 keV.",
author = "Supapan Seraphin and Cordts, {Bernhard F.}",
year = "1992",
language = "English (US)",
isbn = "0780301846",
series = "1991 IEEE International SOI Conference Proceedings",
publisher = "Publ by IEEE",
pages = "86--87",
booktitle = "1991 IEEE International SOI Conference Proceedings",
note = "1991 IEEE International SOI Conference ; Conference date: 01-10-1991 Through 03-10-1991",
}