Synthesis, X-ray, spectroelectrochemical, and theoretical studies of a tricyanovinyl-capped quaterthiophene: A correlation of semiconductor performance with physical properties

Michael W. Burand; Kari A. McGee; Xiuyu Cai; Demetrio A. da Silva Filho; Jean Luc Brédas; C. Daniel Frisbie; Kent R. Mann

doi:10.1016/j.cplett.2006.04.087

Synthesis, X-ray, spectroelectrochemical, and theoretical studies of a tricyanovinyl-capped quaterthiophene: A correlation of semiconductor performance with physical properties

Michael W. Burand
, Kari A. McGee
, Xiuyu Cai
, Demetrio A. da Silva Filho
, Jean Luc Brédas
, C. Daniel Frisbie
, Kent R. Mann

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A new tricyanovinyl-substituted quaterthiophene compound has been synthesized and characterized by X-ray crystallography, cyclic voltammetry, spectroelectrochemistry, and theoretical analysis. The tricyanovinyl group provides a dramatic change in the physical properties of the quaterthiophene. The molecule has been tested as the semiconducting layer in an n-type thin-film transistor. The device properties correlate well with the solid-state packing, spectroelectrochemical results, and theoretical modeling.

Original language	English (US)
Pages (from-to)	251-256
Number of pages	6
Journal	Chemical Physics Letters
Volume	425
Issue number	4-6
DOIs	https://doi.org/10.1016/j.cplett.2006.04.087
State	Published - Jul 10 2006
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/j.cplett.2006.04.087

Cite this

Burand, M. W., McGee, K. A., Cai, X., da Silva Filho, D. A., Brédas, J. L., Daniel Frisbie, C., & Mann, K. R. (2006). Synthesis, X-ray, spectroelectrochemical, and theoretical studies of a tricyanovinyl-capped quaterthiophene: A correlation of semiconductor performance with physical properties. Chemical Physics Letters, 425(4-6), 251-256. https://doi.org/10.1016/j.cplett.2006.04.087

Synthesis, X-ray, spectroelectrochemical, and theoretical studies of a tricyanovinyl-capped quaterthiophene: A correlation of semiconductor performance with physical properties. / Burand, Michael W.; McGee, Kari A.; Cai, Xiuyu et al.
In: Chemical Physics Letters, Vol. 425, No. 4-6, 10.07.2006, p. 251-256.

Research output: Contribution to journal › Article › peer-review

Burand, MW, McGee, KA, Cai, X, da Silva Filho, DA, Brédas, JL, Daniel Frisbie, C & Mann, KR 2006, 'Synthesis, X-ray, spectroelectrochemical, and theoretical studies of a tricyanovinyl-capped quaterthiophene: A correlation of semiconductor performance with physical properties', Chemical Physics Letters, vol. 425, no. 4-6, pp. 251-256. https://doi.org/10.1016/j.cplett.2006.04.087

@article{8563373a210e4c90bad52c7959678f3b,

title = "Synthesis, X-ray, spectroelectrochemical, and theoretical studies of a tricyanovinyl-capped quaterthiophene: A correlation of semiconductor performance with physical properties",

abstract = "A new tricyanovinyl-substituted quaterthiophene compound has been synthesized and characterized by X-ray crystallography, cyclic voltammetry, spectroelectrochemistry, and theoretical analysis. The tricyanovinyl group provides a dramatic change in the physical properties of the quaterthiophene. The molecule has been tested as the semiconducting layer in an n-type thin-film transistor. The device properties correlate well with the solid-state packing, spectroelectrochemical results, and theoretical modeling.",

author = "Burand, \{Michael W.\} and McGee, \{Kari A.\} and Xiuyu Cai and \{da Silva Filho\}, \{Demetrio A.\} and Br{\'e}das, \{Jean Luc\} and \{Daniel Frisbie\}, C. and Mann, \{Kent R.\}",

note = "Funding Information: This work was supported primarily by the M rsec Program of the National Science Foundation under Award Number DMR-0212302. The work at Georgia Tech was also partly supported via NSF grants CHE-0342321 and CHE-0443564. M.W.B thanks Prof. D.A. Freedman for his assistance with spectroelectrochemistry and Prof. T. M. Pappenfus for helpful discussions. The authors acknowledge the X-ray Crystallographic Laboratory in the University of Minnesota Department of Chemistry. ",

year = "2006",

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doi = "10.1016/j.cplett.2006.04.087",

language = "English (US)",

volume = "425",

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AU - Burand, Michael W.

AU - McGee, Kari A.

AU - Cai, Xiuyu

AU - da Silva Filho, Demetrio A.

AU - Brédas, Jean Luc

AU - Daniel Frisbie, C.

AU - Mann, Kent R.

N1 - Funding Information: This work was supported primarily by the M rsec Program of the National Science Foundation under Award Number DMR-0212302. The work at Georgia Tech was also partly supported via NSF grants CHE-0342321 and CHE-0443564. M.W.B thanks Prof. D.A. Freedman for his assistance with spectroelectrochemistry and Prof. T. M. Pappenfus for helpful discussions. The authors acknowledge the X-ray Crystallographic Laboratory in the University of Minnesota Department of Chemistry.

PY - 2006/7/10

Y1 - 2006/7/10

N2 - A new tricyanovinyl-substituted quaterthiophene compound has been synthesized and characterized by X-ray crystallography, cyclic voltammetry, spectroelectrochemistry, and theoretical analysis. The tricyanovinyl group provides a dramatic change in the physical properties of the quaterthiophene. The molecule has been tested as the semiconducting layer in an n-type thin-film transistor. The device properties correlate well with the solid-state packing, spectroelectrochemical results, and theoretical modeling.

AB - A new tricyanovinyl-substituted quaterthiophene compound has been synthesized and characterized by X-ray crystallography, cyclic voltammetry, spectroelectrochemistry, and theoretical analysis. The tricyanovinyl group provides a dramatic change in the physical properties of the quaterthiophene. The molecule has been tested as the semiconducting layer in an n-type thin-film transistor. The device properties correlate well with the solid-state packing, spectroelectrochemical results, and theoretical modeling.

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Synthesis, X-ray, spectroelectrochemical, and theoretical studies of a tricyanovinyl-capped quaterthiophene: A correlation of semiconductor performance with physical properties

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