Suspended individual SWCNT characterization via bottom gate FET configuration

Mingguang Tuo; Lu Wang; Moh R. Amer; Xiaoju Yu; Stephen B. Cronin; Hao Xin

doi:10.1002/mop.30782

Suspended individual SWCNT characterization via bottom gate FET configuration

Mingguang Tuo, Lu Wang, Moh R. Amer, Xiaoju Yu, Stephen B. Cronin, Hao Xin

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The microwave transmission properties of suspended, quasi-metallic individual single-walled carbon nanotubes (SWCNTs) with a bottom gate field-effect transistor (FET) configuration have been investigated up to 10 GHz by standard two-port S-parameter measurements under different gate bias voltages. A tapered coplanar waveguide (CPW) transmission-line test fixture is designed to overcome the parasitic and mismatch issues. An open-through de-embedding algorithm has been applied to extract the intrinsic properties of SWCNTs. And an equivalent circuit model has been proposed to fit the extracted measurement data as a function of the bottom gate bias voltage, facilitating the applications of CNTs into high-frequency nanocircuits. Moreover, the properties of our transistor device are found to change after a period of time.

Original language	English (US)
Pages (from-to)	2610-2614
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	59
Issue number	10
DOIs	https://doi.org/10.1002/mop.30782
State	Published - Oct 2017

Keywords

bottom gate FET
de-embedding
equivalent circuit model
individual SWCNT
suspended
tapered transmission-line

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1002/mop.30782

Cite this

@article{6e34b15ed5fb4af39825a56b704405d5,

title = "Suspended individual SWCNT characterization via bottom gate FET configuration",

abstract = "The microwave transmission properties of suspended, quasi-metallic individual single-walled carbon nanotubes (SWCNTs) with a bottom gate field-effect transistor (FET) configuration have been investigated up to 10 GHz by standard two-port S-parameter measurements under different gate bias voltages. A tapered coplanar waveguide (CPW) transmission-line test fixture is designed to overcome the parasitic and mismatch issues. An open-through de-embedding algorithm has been applied to extract the intrinsic properties of SWCNTs. And an equivalent circuit model has been proposed to fit the extracted measurement data as a function of the bottom gate bias voltage, facilitating the applications of CNTs into high-frequency nanocircuits. Moreover, the properties of our transistor device are found to change after a period of time.",

keywords = "bottom gate FET, de-embedding, equivalent circuit model, individual SWCNT, suspended, tapered transmission-line",

author = "Mingguang Tuo and Lu Wang and Amer, {Moh R.} and Xiaoju Yu and Cronin, {Stephen B.} and Hao Xin",

note = "Publisher Copyright: {\textcopyright} 2017 Wiley Periodicals, Inc.",

year = "2017",

month = oct,

doi = "10.1002/mop.30782",

language = "English (US)",

volume = "59",

pages = "2610--2614",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley & Sons Inc.",

number = "10",

}

TY - JOUR

T1 - Suspended individual SWCNT characterization via bottom gate FET configuration

AU - Tuo, Mingguang

AU - Wang, Lu

AU - Amer, Moh R.

AU - Yu, Xiaoju

AU - Cronin, Stephen B.

AU - Xin, Hao

PY - 2017/10

Y1 - 2017/10

N2 - The microwave transmission properties of suspended, quasi-metallic individual single-walled carbon nanotubes (SWCNTs) with a bottom gate field-effect transistor (FET) configuration have been investigated up to 10 GHz by standard two-port S-parameter measurements under different gate bias voltages. A tapered coplanar waveguide (CPW) transmission-line test fixture is designed to overcome the parasitic and mismatch issues. An open-through de-embedding algorithm has been applied to extract the intrinsic properties of SWCNTs. And an equivalent circuit model has been proposed to fit the extracted measurement data as a function of the bottom gate bias voltage, facilitating the applications of CNTs into high-frequency nanocircuits. Moreover, the properties of our transistor device are found to change after a period of time.

AB - The microwave transmission properties of suspended, quasi-metallic individual single-walled carbon nanotubes (SWCNTs) with a bottom gate field-effect transistor (FET) configuration have been investigated up to 10 GHz by standard two-port S-parameter measurements under different gate bias voltages. A tapered coplanar waveguide (CPW) transmission-line test fixture is designed to overcome the parasitic and mismatch issues. An open-through de-embedding algorithm has been applied to extract the intrinsic properties of SWCNTs. And an equivalent circuit model has been proposed to fit the extracted measurement data as a function of the bottom gate bias voltage, facilitating the applications of CNTs into high-frequency nanocircuits. Moreover, the properties of our transistor device are found to change after a period of time.

KW - bottom gate FET

KW - de-embedding

KW - equivalent circuit model

KW - individual SWCNT

KW - suspended

KW - tapered transmission-line

UR - http://www.scopus.com/inward/record.url?scp=85025811146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85025811146&partnerID=8YFLogxK

U2 - 10.1002/mop.30782

DO - 10.1002/mop.30782

M3 - Article

AN - SCOPUS:85025811146

SN - 0895-2477

VL - 59

SP - 2610

EP - 2614

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 10

ER -

Suspended individual SWCNT characterization via bottom gate FET configuration

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this