Surface cleaning of SiGe(100) and passivation of Ge(100) with aqueous ammonium sulfide

S. L. Heslop; P. Engesser; H. Okorn-Schmidt; A. J. Muscat

doi:10.1149/06908.0287ecst

Surface cleaning of SiGe(100) and passivation of Ge(100) with aqueous ammonium sulfide

S. L. Heslop, P. Engesser, H. Okorn-Schmidt, A. J. Muscat

Chemical and Environmental Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

The effect of standard aqueous cleans including SC-1, HCl, HF, and HCl/HF mixtures on SiGe(100) surfaces with 50, 75 and 85% Ge molar ratios was characterized with XPS and spectroscopic ellipsometry. HF was most effective at removing the oxides of both Ge and Si and reduced the carbon contamination. SC-1 selectively depleted Ge from the surface. Passivation of Ge(100) surfaces with aqueous (NH₄)₂S was characterized with XPS as a function of the solution concentration and with the addition of H₂O₂. The passivation process was independent of the (NH₄)₂S concentration and approximately 3 Å of S was deposited or about one layer based on XPS. Addition of H₂O₂ to very dilute (NH₄)₂S oxidized the surface while addition to higher concentrations showed similar effects as a sequential HCl/H₂O₂ treatment.

Original language	English (US)
Title of host publication	Semiconductor Cleaning Science and Technology 14, SCST 14
Editors	T. Hattori, P. W. Mertens, R. E. Novak, J. Ruzyllo
Publisher	Electrochemical Society Inc.
Pages	287-293
Number of pages	7
Edition	8
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06908.0287ecst
State	Published - 2015
Event	Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	8
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	10/11/15 → 10/15/15

ASJC Scopus subject areas

General Engineering

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10.1149/06908.0287ecst

Cite this

Heslop, S. L., Engesser, P., Okorn-Schmidt, H., & Muscat, A. J. (2015). Surface cleaning of SiGe(100) and passivation of Ge(100) with aqueous ammonium sulfide. In T. Hattori, P. W. Mertens, R. E. Novak, & J. Ruzyllo (Eds.), Semiconductor Cleaning Science and Technology 14, SCST 14 (8 ed., pp. 287-293). (ECS Transactions; Vol. 69, No. 8). Electrochemical Society Inc.. https://doi.org/10.1149/06908.0287ecst

Surface cleaning of SiGe(100) and passivation of Ge(100) with aqueous ammonium sulfide. / Heslop, S. L.; Engesser, P.; Okorn-Schmidt, H. et al.
Semiconductor Cleaning Science and Technology 14, SCST 14. ed. / T. Hattori; P. W. Mertens; R. E. Novak; J. Ruzyllo. 8. ed. Electrochemical Society Inc., 2015. p. 287-293 (ECS Transactions; Vol. 69, No. 8).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Heslop, SL, Engesser, P, Okorn-Schmidt, H & Muscat, AJ 2015, Surface cleaning of SiGe(100) and passivation of Ge(100) with aqueous ammonium sulfide. in T Hattori, PW Mertens, RE Novak & J Ruzyllo (eds), Semiconductor Cleaning Science and Technology 14, SCST 14. 8 edn, ECS Transactions, no. 8, vol. 69, Electrochemical Society Inc., pp. 287-293, Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06908.0287ecst

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title = "Surface cleaning of SiGe(100) and passivation of Ge(100) with aqueous ammonium sulfide",

abstract = "The effect of standard aqueous cleans including SC-1, HCl, HF, and HCl/HF mixtures on SiGe(100) surfaces with 50, 75 and 85% Ge molar ratios was characterized with XPS and spectroscopic ellipsometry. HF was most effective at removing the oxides of both Ge and Si and reduced the carbon contamination. SC-1 selectively depleted Ge from the surface. Passivation of Ge(100) surfaces with aqueous (NH4)2S was characterized with XPS as a function of the solution concentration and with the addition of H2O2. The passivation process was independent of the (NH4)2S concentration and approximately 3 {\AA} of S was deposited or about one layer based on XPS. Addition of H2O2 to very dilute (NH4)2S oxidized the surface while addition to higher concentrations showed similar effects as a sequential HCl/H2O2 treatment.",

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T1 - Surface cleaning of SiGe(100) and passivation of Ge(100) with aqueous ammonium sulfide

AU - Heslop, S. L.

AU - Engesser, P.

AU - Okorn-Schmidt, H.

AU - Muscat, A. J.

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2015

Y1 - 2015

N2 - The effect of standard aqueous cleans including SC-1, HCl, HF, and HCl/HF mixtures on SiGe(100) surfaces with 50, 75 and 85% Ge molar ratios was characterized with XPS and spectroscopic ellipsometry. HF was most effective at removing the oxides of both Ge and Si and reduced the carbon contamination. SC-1 selectively depleted Ge from the surface. Passivation of Ge(100) surfaces with aqueous (NH4)2S was characterized with XPS as a function of the solution concentration and with the addition of H2O2. The passivation process was independent of the (NH4)2S concentration and approximately 3 Å of S was deposited or about one layer based on XPS. Addition of H2O2 to very dilute (NH4)2S oxidized the surface while addition to higher concentrations showed similar effects as a sequential HCl/H2O2 treatment.

AB - The effect of standard aqueous cleans including SC-1, HCl, HF, and HCl/HF mixtures on SiGe(100) surfaces with 50, 75 and 85% Ge molar ratios was characterized with XPS and spectroscopic ellipsometry. HF was most effective at removing the oxides of both Ge and Si and reduced the carbon contamination. SC-1 selectively depleted Ge from the surface. Passivation of Ge(100) surfaces with aqueous (NH4)2S was characterized with XPS as a function of the solution concentration and with the addition of H2O2. The passivation process was independent of the (NH4)2S concentration and approximately 3 Å of S was deposited or about one layer based on XPS. Addition of H2O2 to very dilute (NH4)2S oxidized the surface while addition to higher concentrations showed similar effects as a sequential HCl/H2O2 treatment.

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ER -

Surface cleaning of SiGe(100) and passivation of Ge(100) with aqueous ammonium sulfide

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