Surface chemistry of III-V semiconductors after wet etching with HCl and H2O2

Pablo Mancheno-Posso; Anthony J. Muscat

doi:10.1149/06908.0227ecst

Surface chemistry of III-V semiconductors after wet etching with HCl and H₂O₂

Pablo Mancheno-Posso, Anthony J. Muscat

Chemical and Environmental Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

GaAs(100) was immersed in water and aqueous mixtures of isopropyl alcohol, ethylene glycol, acetic acid, glycolic acid, tartaric acid, and HCl with and without the addition of H₂O₂ to understand the etching mechanism. The surface composition after etching was characterized using x-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD). Ga and As oxides with high oxidation states dissolve in water, but acids are needed to remove the oxides with low oxidation states. H₂O₂ oxidized the bulk substrate, and only the acids that have pK_a values lower than 4 supported etching. After etching with HCl, the surface is terminated by arsenic chloride (As-Cl).

Original language	English (US)
Title of host publication	Semiconductor Cleaning Science and Technology 14, SCST 14
Editors	T. Hattori, P. W. Mertens, R. E. Novak, J. Ruzyllo
Publisher	Electrochemical Society Inc.
Pages	227-233
Number of pages	7
Edition	8
ISBN (Electronic)	9781607685395
DOIs	https://doi.org/10.1149/06908.0227ecst
State	Published - 2015
Event	Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting - Phoenix, United States Duration: Oct 11 2015 → Oct 15 2015

Publication series

Name	ECS Transactions
Number	8
Volume	69
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting
Country/Territory	United States
City	Phoenix
Period	10/11/15 → 10/15/15

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/06908.0227ecst

Cite this

Mancheno-Posso, P., & Muscat, A. J. (2015). Surface chemistry of III-V semiconductors after wet etching with HCl and H₂O₂. In T. Hattori, P. W. Mertens, R. E. Novak, & J. Ruzyllo (Eds.), Semiconductor Cleaning Science and Technology 14, SCST 14 (8 ed., pp. 227-233). (ECS Transactions; Vol. 69, No. 8). Electrochemical Society Inc.. https://doi.org/10.1149/06908.0227ecst

Surface chemistry of III-V semiconductors after wet etching with HCl and H₂O₂. / Mancheno-Posso, Pablo; Muscat, Anthony J.
Semiconductor Cleaning Science and Technology 14, SCST 14. ed. / T. Hattori; P. W. Mertens; R. E. Novak; J. Ruzyllo. 8. ed. Electrochemical Society Inc., 2015. p. 227-233 (ECS Transactions; Vol. 69, No. 8).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mancheno-Posso, P & Muscat, AJ 2015, Surface chemistry of III-V semiconductors after wet etching with HCl and H₂O₂. in T Hattori, PW Mertens, RE Novak & J Ruzyllo (eds), Semiconductor Cleaning Science and Technology 14, SCST 14. 8 edn, ECS Transactions, no. 8, vol. 69, Electrochemical Society Inc., pp. 227-233, Symposium on Semiconductor Cleaning Science and Technology 14, SCST 2015 - 228th ECS Meeting, Phoenix, United States, 10/11/15. https://doi.org/10.1149/06908.0227ecst

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abstract = "GaAs(100) was immersed in water and aqueous mixtures of isopropyl alcohol, ethylene glycol, acetic acid, glycolic acid, tartaric acid, and HCl with and without the addition of H2O2 to understand the etching mechanism. The surface composition after etching was characterized using x-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD). Ga and As oxides with high oxidation states dissolve in water, but acids are needed to remove the oxides with low oxidation states. H2O2 oxidized the bulk substrate, and only the acids that have pKa values lower than 4 supported etching. After etching with HCl, the surface is terminated by arsenic chloride (As-Cl).",

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