Surface chemistry of Al(CH3)3 and TiCl4 on GaAs(100) and InGaAs during the first half-cycle of atomic layer deposition

Bernal Granados; Fee Li Lie; A. J. Muscat

doi:10.1017/S1431927612006381

Surface chemistry of Al(CH₃)₃ and TiCl₄ on GaAs(100) and InGaAs during the first half-cycle of atomic layer deposition

Bernal Granados
, Fee Li Lie
, A. J. Muscat

Chemical and Environmental Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	906-907
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	18
DOIs	https://doi.org/10.1017/S1431927612006381
State	Published - Jul 2012

ASJC Scopus subject areas

Instrumentation

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title = "Surface chemistry of Al(CH3)3 and TiCl4 on GaAs(100) and InGaAs during the first half-cycle of atomic layer deposition",

author = "Bernal Granados and Lie, \{Fee Li\} and Muscat, \{A. J.\}",

year = "2012",

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doi = "10.1017/S1431927612006381",

language = "English (US)",

volume = "18",

pages = "906--907",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Oxford University Press",

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T1 - Surface chemistry of Al(CH3)3 and TiCl4 on GaAs(100) and InGaAs during the first half-cycle of atomic layer deposition

AU - Granados, Bernal

AU - Lie, Fee Li

AU - Muscat, A. J.

PY - 2012/7

Y1 - 2012/7

UR - https://www.scopus.com/pages/publications/85008564912

UR - https://www.scopus.com/pages/publications/85008564912#tab=citedBy

U2 - 10.1017/S1431927612006381

DO - 10.1017/S1431927612006381

M3 - Article

AN - SCOPUS:85008564912

SN - 1431-9276

VL - 18

SP - 906

EP - 907

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

ER -

Surface chemistry of Al(CH3)3 and TiCl4 on GaAs(100) and InGaAs during the first half-cycle of atomic layer deposition

ASJC Scopus subject areas

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Surface chemistry of Al(CH₃)₃ and TiCl₄ on GaAs(100) and InGaAs during the first half-cycle of atomic layer deposition