@inproceedings{ebbabec4e22f4817b9315e1540be33ed,
title = "Surface charge effects in silicon wafer cleaning using surfactant-containing solutions",
abstract = "The adsorption of an anionic and a cationic surfactant onto a silicon surface was investigated using the technique of ATR (Attenuated Total Reflection) FT-IR at pH values of 2.5 and 9.5. The surface charge development on silicon samples conditioned in these surfactant solutions was investigated using a SPV (Surface Photovoltage) technique. The adsorption of DTAB was found to be much higher at pH = 9.5 than at pH = 2.5. In contrast, adsorption of SDS was independent of pH. The surface charge of HF-last cleaned silicon p(100) wafers was almost the same as that of the as-received wafer. After conditioning in surfactant solutions, negatively charged silicon wafers showed an excess of positive charge except of silicon wafers conditioned in DTAB solution at pH = 9.5. After a DI water rinsing step, the surface charge was returned to its original value.",
author = "Jeon, {Joong Suck} and Srini Raghavan and John Lowell and Valerie Wenner",
year = "1994",
language = "English (US)",
isbn = "0819416703",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Society of Photo-Optical Instrumentation Engineers",
pages = "13--19",
editor = "Mathur, {Jagdish P.} and John Lowell and Chen, {Ray T.}",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing ; Conference date: 20-10-1994 Through 20-10-1994",
}