Supression of carrier recombination in semiconductor lasers by phase-space filling

J. Hader; J. V. Moloney; S. W. Koch

doi:10.1063/1.2132524

Supression of carrier recombination in semiconductor lasers by phase-space filling

J. Hader, J. V. Moloney, S. W. Koch

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

A fully microscopic model is used to calculate the carrier losses in semiconductor lasers due to Auger recombination and spontaneous emission. The results show that the commonly assumed power-law dependencies of these loss processes on the plasma density break down already below the transparency point. Most significantly, the density dependent increase of the spontaneous emission changes from quadratic to linear, while the increase of the Auger recombination is reduced from cubic to approximately quadratic or even less.

Original language	English (US)
Article number	201112
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	20
DOIs	https://doi.org/10.1063/1.2132524
State	Published - Nov 14 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2132524

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abstract = "A fully microscopic model is used to calculate the carrier losses in semiconductor lasers due to Auger recombination and spontaneous emission. The results show that the commonly assumed power-law dependencies of these loss processes on the plasma density break down already below the transparency point. Most significantly, the density dependent increase of the spontaneous emission changes from quadratic to linear, while the increase of the Auger recombination is reduced from cubic to approximately quadratic or even less.",

author = "J. Hader and Moloney, {J. V.} and Koch, {S. W.}",

note = "Funding Information: This work was supported by AFOSR Contract No. F49620-02-1-0380 and by the Deutsche Forschungsgemeinschaft.",

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AU - Moloney, J. V.

AU - Koch, S. W.

N1 - Funding Information: This work was supported by AFOSR Contract No. F49620-02-1-0380 and by the Deutsche Forschungsgemeinschaft.

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Y1 - 2005/11/14

N2 - A fully microscopic model is used to calculate the carrier losses in semiconductor lasers due to Auger recombination and spontaneous emission. The results show that the commonly assumed power-law dependencies of these loss processes on the plasma density break down already below the transparency point. Most significantly, the density dependent increase of the spontaneous emission changes from quadratic to linear, while the increase of the Auger recombination is reduced from cubic to approximately quadratic or even less.

AB - A fully microscopic model is used to calculate the carrier losses in semiconductor lasers due to Auger recombination and spontaneous emission. The results show that the commonly assumed power-law dependencies of these loss processes on the plasma density break down already below the transparency point. Most significantly, the density dependent increase of the spontaneous emission changes from quadratic to linear, while the increase of the Auger recombination is reduced from cubic to approximately quadratic or even less.

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Supression of carrier recombination in semiconductor lasers by phase-space filling

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