Suppression of intervalley scattering in Ga(As)Sb quantum wells

K. C. Hall; S. W. Leonard; H. M. Van Driel; A. R. Kost; E. Selvig

doi:10.1063/1.1322368

Suppression of intervalley scattering in Ga(As)Sb quantum wells

K. C. Hall
, S. W. Leonard
, H. M. Van Driel
, A. R. Kost
, E. Selvig

James C Wyant Coll Optical Sci

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Femtosecond time-resolved reflectivity was measured near the 1.55 μm absorption edge of several GaAs_xSb_1-x/AlSb quantum well samples. On the basis of differences in the reflectivity recovery kinetics and plateau values, we deduce that Γ-L intervalley scattering can be effectively suppressed for x≥0.19. This is consistent with calculations incorporating confinement and strain effects which give L-Γ energy separations of 29 (x = 0) and 109 meV (x = 0.19). Suppression of intervalley scattering can lead to increased internal quantum efficiency and higher carrier mobility in 1.55 μm based devices.

Original language	English (US)
Pages (from-to)	2882-2884
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	18
DOIs	https://doi.org/10.1063/1.1322368
State	Published - Oct 30 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1322368

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abstract = "Femtosecond time-resolved reflectivity was measured near the 1.55 μm absorption edge of several GaAsxSb1-x/AlSb quantum well samples. On the basis of differences in the reflectivity recovery kinetics and plateau values, we deduce that Γ-L intervalley scattering can be effectively suppressed for x≥0.19. This is consistent with calculations incorporating confinement and strain effects which give L-Γ energy separations of 29 (x = 0) and 109 meV (x = 0.19). Suppression of intervalley scattering can lead to increased internal quantum efficiency and higher carrier mobility in 1.55 μm based devices.",

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doi = "10.1063/1.1322368",

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T1 - Suppression of intervalley scattering in Ga(As)Sb quantum wells

AU - Hall, K. C.

AU - Leonard, S. W.

AU - Van Driel, H. M.

AU - Kost, A. R.

AU - Selvig, E.

PY - 2000/10/30

Y1 - 2000/10/30

N2 - Femtosecond time-resolved reflectivity was measured near the 1.55 μm absorption edge of several GaAsxSb1-x/AlSb quantum well samples. On the basis of differences in the reflectivity recovery kinetics and plateau values, we deduce that Γ-L intervalley scattering can be effectively suppressed for x≥0.19. This is consistent with calculations incorporating confinement and strain effects which give L-Γ energy separations of 29 (x = 0) and 109 meV (x = 0.19). Suppression of intervalley scattering can lead to increased internal quantum efficiency and higher carrier mobility in 1.55 μm based devices.

AB - Femtosecond time-resolved reflectivity was measured near the 1.55 μm absorption edge of several GaAsxSb1-x/AlSb quantum well samples. On the basis of differences in the reflectivity recovery kinetics and plateau values, we deduce that Γ-L intervalley scattering can be effectively suppressed for x≥0.19. This is consistent with calculations incorporating confinement and strain effects which give L-Γ energy separations of 29 (x = 0) and 109 meV (x = 0.19). Suppression of intervalley scattering can lead to increased internal quantum efficiency and higher carrier mobility in 1.55 μm based devices.

UR - https://www.scopus.com/pages/publications/0007898209

UR - https://www.scopus.com/pages/publications/0007898209#tab=citedBy

U2 - 10.1063/1.1322368

DO - 10.1063/1.1322368

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SN - 0003-6951

VL - 77

SP - 2882

EP - 2884

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Suppression of intervalley scattering in Ga(As)Sb quantum wells

Abstract

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