Superlattice physics of digitally grown epitaxial InAlGaAs layers

J. K. White; A. Joshi; M. Extavour; A. J. SpringThorpe; J. Hader; J. V. Moloney; S. W. Koch

doi:10.1117/12.470525

Superlattice physics of digitally grown epitaxial InAlGaAs layers

J. K. White, A. Joshi, M. Extavour, A. J. SpringThorpe, J. Hader, J. V. Moloney, S. W. Koch

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The material physics of digitally grown InAlGaAs quaternary alloy systems are investigated using Molecular Beam Epitaxy (MBE) grown layers. With MBE, arbitrary epitaxial alloy compositions can be achieved, without changing the group III elemental constituents flux rates, by simple sequential shuttering of the relevant fluxes. Monolayer fluctuations create inhomogeneities that lead to a broadening of the photoluminescence (PL) spectra. Multiple PL peaks are also seen in select alloy compositions.

Original language	English (US)
Pages (from-to)	271-278
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4646
DOIs	https://doi.org/10.1117/12.470525
State	Published - 2002

Keywords

Digital alloy
InAlGaAs
Molecular beam epitaxy
Semiconductor lasers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.470525

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abstract = "The material physics of digitally grown InAlGaAs quaternary alloy systems are investigated using Molecular Beam Epitaxy (MBE) grown layers. With MBE, arbitrary epitaxial alloy compositions can be achieved, without changing the group III elemental constituents flux rates, by simple sequential shuttering of the relevant fluxes. Monolayer fluctuations create inhomogeneities that lead to a broadening of the photoluminescence (PL) spectra. Multiple PL peaks are also seen in select alloy compositions.",

keywords = "Digital alloy, InAlGaAs, Molecular beam epitaxy, Semiconductor lasers",

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AU - White, J. K.

AU - Joshi, A.

AU - Extavour, M.

AU - SpringThorpe, A. J.

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

PY - 2002

Y1 - 2002

N2 - The material physics of digitally grown InAlGaAs quaternary alloy systems are investigated using Molecular Beam Epitaxy (MBE) grown layers. With MBE, arbitrary epitaxial alloy compositions can be achieved, without changing the group III elemental constituents flux rates, by simple sequential shuttering of the relevant fluxes. Monolayer fluctuations create inhomogeneities that lead to a broadening of the photoluminescence (PL) spectra. Multiple PL peaks are also seen in select alloy compositions.

AB - The material physics of digitally grown InAlGaAs quaternary alloy systems are investigated using Molecular Beam Epitaxy (MBE) grown layers. With MBE, arbitrary epitaxial alloy compositions can be achieved, without changing the group III elemental constituents flux rates, by simple sequential shuttering of the relevant fluxes. Monolayer fluctuations create inhomogeneities that lead to a broadening of the photoluminescence (PL) spectra. Multiple PL peaks are also seen in select alloy compositions.

KW - Digital alloy

KW - InAlGaAs

KW - Molecular beam epitaxy

KW - Semiconductor lasers

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JF - Proceedings of SPIE - The International Society for Optical Engineering

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Superlattice physics of digitally grown epitaxial InAlGaAs layers

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Keywords

ASJC Scopus subject areas

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