Subpicosecond spin relaxation in GaAsSb multiple quantum wells

K. C. Hall; S. W. Leonard; H. M. Van Driel; A. R. Kost; E. Selvig; D. H. Chow

doi:10.1063/1.125422

Subpicosecond spin relaxation in GaAsSb multiple quantum wells

K. C. Hall, S. W. Leonard, H. M. Van Driel, A. R. Kost, E. Selvig, D. H. Chow

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Abstract

Spin relaxation times in GaAs_xSb_{1 - x} quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 μm, 100 fs pulses. Values of 1.03 and 0.84 ps are obtained for samples with x = 0 and 0.188, respectively. These times are >5 times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation times are attributed to the larger spin-orbit conduction-band splitting in the Ga(As)Sb system, consistent with the D'yakonov-Perel theory of spin relaxation [M. I. D'yakonov and V. I. Perel, Sov. Phys. JETP 38, 177 (1974)]. Our results indicate the feasibility of engineering an all-optical, polarization switch at 1.5 μm with response time <250 fs.

Original language	English (US)
Pages (from-to)	3665-3667
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	23
DOIs	https://doi.org/10.1063/1.125422
State	Published - Dec 6 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.125422

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title = "Subpicosecond spin relaxation in GaAsSb multiple quantum wells",

abstract = "Spin relaxation times in GaAsxSb1 - x quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 μm, 100 fs pulses. Values of 1.03 and 0.84 ps are obtained for samples with x = 0 and 0.188, respectively. These times are >5 times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation times are attributed to the larger spin-orbit conduction-band splitting in the Ga(As)Sb system, consistent with the D'yakonov-Perel theory of spin relaxation [M. I. D'yakonov and V. I. Perel, Sov. Phys. JETP 38, 177 (1974)]. Our results indicate the feasibility of engineering an all-optical, polarization switch at 1.5 μm with response time <250 fs.",

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T1 - Subpicosecond spin relaxation in GaAsSb multiple quantum wells

AU - Hall, K. C.

AU - Leonard, S. W.

AU - Van Driel, H. M.

AU - Kost, A. R.

AU - Selvig, E.

AU - Chow, D. H.

PY - 1999/12/6

Y1 - 1999/12/6

N2 - Spin relaxation times in GaAsxSb1 - x quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 μm, 100 fs pulses. Values of 1.03 and 0.84 ps are obtained for samples with x = 0 and 0.188, respectively. These times are >5 times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation times are attributed to the larger spin-orbit conduction-band splitting in the Ga(As)Sb system, consistent with the D'yakonov-Perel theory of spin relaxation [M. I. D'yakonov and V. I. Perel, Sov. Phys. JETP 38, 177 (1974)]. Our results indicate the feasibility of engineering an all-optical, polarization switch at 1.5 μm with response time <250 fs.

AB - Spin relaxation times in GaAsxSb1 - x quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 μm, 100 fs pulses. Values of 1.03 and 0.84 ps are obtained for samples with x = 0 and 0.188, respectively. These times are >5 times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation times are attributed to the larger spin-orbit conduction-band splitting in the Ga(As)Sb system, consistent with the D'yakonov-Perel theory of spin relaxation [M. I. D'yakonov and V. I. Perel, Sov. Phys. JETP 38, 177 (1974)]. Our results indicate the feasibility of engineering an all-optical, polarization switch at 1.5 μm with response time <250 fs.

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Subpicosecond spin relaxation in GaAsSb multiple quantum wells

Abstract

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