Subpicosecond spin relaxation in GaAsSb multiple quantum wells

K. C. Hall, S. W. Leonard, H. M. Van Driel, A. R. Kost, E. Selvig, D. H. Chow

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


Spin relaxation times in GaAsxSb1-x quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 μm, 100 fs pulses. Values of 1.03 and 0.84 ps are obtained for samples with x=0 and 0.188, respectively. These times are >5 times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation times are attributed to the larger spin-orbit conduction-band splitting in the Ga(As)Sb system, consistent with the D'yakonov-Perel theory of spin relaxation [M. I. D'yakonov and V. I. Perel, Sov. Phys. JETP 38, 177 (1974)]. Our results indicate the feasibility of engineering an all-optical, polarization switch at 1.5 μm with response time <250 fs.

Original languageEnglish (US)
Pages (from-to)4156-4158
Number of pages3
JournalApplied Physics Letters
Issue number26
StatePublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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