Abstract
A multiple exposure technique is used to print various types of patterns with critical dimensions much smaller than the wavelength of light used for exposure. The process latitude of the exposure can be very large because it is limited by the large pattern of the individual mask and not by the critical dimension of the small feature.
Original language | English (US) |
---|---|
Pages (from-to) | 119-122 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 53 |
Issue number | 1 |
DOIs | |
State | Published - Jun 2000 |
Externally published | Yes |
Event | 25th International Conference on Micro- and Nano-Engineering - Rome, Italy Duration: Sep 21 1999 → Sep 23 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering