Study on the electrical properties and conductive mechanism in SbxSn1-XO2 solid solution system

Xinqin Liu, Haining Zhu, Yusheng Shen

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

This paper reports a study on the solid solution composition and electrical conductivity in SbxSn1-xO2 gas sensing materials, prepared by chemical coprecipitation method. The experimental results show that the solid solution is formed when 0≤x≤0.30. It is found that the conductance of the samples increases over ten times when doped with trace Sb(x=0.005) , and still increases while x≤ 0.04, but slowly decreases when x changes from 0.04 to 0.30. The reason for the conductance change and conductive mechanism are discussed in terms of the valence-variable defects, SboSn and Sb′Sn, in the system. The relative content of Sb5+ and Sb3+ ions, coresponding to the defect equilibrium , was estimated by XPS analysis. The A. C. impendance spectroscopy technique also demonstrated the above conductivity-composition behavior.

Original languageEnglish (US)
Pages (from-to)130-134
Number of pages5
JournalChinese Journal of Inorganic Chemistry
Volume12
Issue number2
StatePublished - 1996
Externally publishedYes

Keywords

  • Conductive mechanism
  • Gas sensing semiconductor
  • SnO
  • Solid solution

ASJC Scopus subject areas

  • Inorganic Chemistry

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