Abstract
This paper reports a study on the solid solution composition and electrical conductivity in SbxSn1-xO2 gas sensing materials, prepared by chemical coprecipitation method. The experimental results show that the solid solution is formed when 0≤x≤0.30. It is found that the conductance of the samples increases over ten times when doped with trace Sb(x=0.005) , and still increases while x≤ 0.04, but slowly decreases when x changes from 0.04 to 0.30. The reason for the conductance change and conductive mechanism are discussed in terms of the valence-variable defects, SboSn and Sb′Sn, in the system. The relative content of Sb5+ and Sb3+ ions, coresponding to the defect equilibrium , was estimated by XPS analysis. The A. C. impendance spectroscopy technique also demonstrated the above conductivity-composition behavior.
Original language | English (US) |
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Pages (from-to) | 130-134 |
Number of pages | 5 |
Journal | Chinese Journal of Inorganic Chemistry |
Volume | 12 |
Issue number | 2 |
State | Published - 1996 |
Externally published | Yes |
Keywords
- Conductive mechanism
- Gas sensing semiconductor
- SnO
- Solid solution
ASJC Scopus subject areas
- Inorganic Chemistry