TY - JOUR
T1 - Structural, magnetic, and transport properties of (Zn,V)Te semiconductors
AU - Wang, Weigang
AU - Ni, Chaoying
AU - Zhu, Tao
AU - Zhang, Huiwu
AU - Xiao, John Q.
N1 - Funding Information:
This work was supported by NSF DMR Grant No. 0405-136.
PY - 2006
Y1 - 2006
N2 - Vanadium-doped ZnTe has been predicted to be one of the candidates for ferromagnetic semiconductors with a high Curie temperature [K. Sato and H. Katayama-Yoshida, Semicond. Sci. Technol. 17, 367 (2002)]. In this paper, we report the structural, magnetic, and transport properties of (Zn,V)Te films prepared by magnetron sputtering. Samples were fabricated on both GaAs and thermally oxidized silicon substrate at elevated temperature. Oriented sample (100) can be achieved on GaAs substrates and only polycrystalline samples are observed on Si substrates. X-ray diffraction (XRD) and transmission electron spectroscopy (TEM) show no magnetic precipitates in the (Zn,V)Te film. The magnetization measurement shows that the oriented sample is paramagnetic at 5 K, while films on Si substrate shows weak ferromagnetism at 5 K. The sign of magnetoresistance (MR= [R(H)-R(0)] R(0)) gradually changes from negative to positive with temperature, and positive MR at high temperatures shows H2 dependence, indicating ordinary MR effect. It is believed the observed negative MR corresponds to the ferromagnetic ordering at lower temperature.
AB - Vanadium-doped ZnTe has been predicted to be one of the candidates for ferromagnetic semiconductors with a high Curie temperature [K. Sato and H. Katayama-Yoshida, Semicond. Sci. Technol. 17, 367 (2002)]. In this paper, we report the structural, magnetic, and transport properties of (Zn,V)Te films prepared by magnetron sputtering. Samples were fabricated on both GaAs and thermally oxidized silicon substrate at elevated temperature. Oriented sample (100) can be achieved on GaAs substrates and only polycrystalline samples are observed on Si substrates. X-ray diffraction (XRD) and transmission electron spectroscopy (TEM) show no magnetic precipitates in the (Zn,V)Te film. The magnetization measurement shows that the oriented sample is paramagnetic at 5 K, while films on Si substrate shows weak ferromagnetism at 5 K. The sign of magnetoresistance (MR= [R(H)-R(0)] R(0)) gradually changes from negative to positive with temperature, and positive MR at high temperatures shows H2 dependence, indicating ordinary MR effect. It is believed the observed negative MR corresponds to the ferromagnetic ordering at lower temperature.
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U2 - 10.1063/1.2151808
DO - 10.1063/1.2151808
M3 - Article
AN - SCOPUS:33646735350
SN - 0021-8979
VL - 99
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 8
M1 - 08D503
ER -