Structural dependence of carrier capture time in semiconductor quantum-well lasers

J. Hader; J. V. Moloney; S. W. Koch

doi:10.1063/1.1774271

Structural dependence of carrier capture time in semiconductor quantum-well lasers

J. Hader, J. V. Moloney, S. W. Koch

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Carrier capture for InGaPA-based and InGaAlAs-based multiple quantum-well structures for the 1.55 μm wavelength regime was investigated. The capture time and dynamics were found to be governed by transitions between quantum states that were delocalized throughout the whole structure. It was found that the concept of a unique capture time was often not appropriate, since this time was not a constant that is characteristicc for a given quantum well. It was shown that the capture can be made faster by using structures with a larger ratio of well- to barrier-material.

Original language	English (US)
Pages (from-to)	369-371
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	3
DOIs	https://doi.org/10.1063/1.1774271
State	Published - Jul 19 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1774271

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title = "Structural dependence of carrier capture time in semiconductor quantum-well lasers",

abstract = "Carrier capture for InGaPA-based and InGaAlAs-based multiple quantum-well structures for the 1.55 μm wavelength regime was investigated. The capture time and dynamics were found to be governed by transitions between quantum states that were delocalized throughout the whole structure. It was found that the concept of a unique capture time was often not appropriate, since this time was not a constant that is characteristicc for a given quantum well. It was shown that the capture can be made faster by using structures with a larger ratio of well- to barrier-material.",

author = "J. Hader and Moloney, {J. V.} and Koch, {S. W.}",

note = "Funding Information: This work was supported by the U.S. Air Force Office of Scientific Research (F49620-02-1-0380), the Max-Planck Research Prize of the Max-Planck Society and the Humboldt Foundation and the Deutsche Forschungsgemeinschaft.",

year = "2004",

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AU - Moloney, J. V.

AU - Koch, S. W.

N1 - Funding Information: This work was supported by the U.S. Air Force Office of Scientific Research (F49620-02-1-0380), the Max-Planck Research Prize of the Max-Planck Society and the Humboldt Foundation and the Deutsche Forschungsgemeinschaft.

PY - 2004/7/19

Y1 - 2004/7/19

N2 - Carrier capture for InGaPA-based and InGaAlAs-based multiple quantum-well structures for the 1.55 μm wavelength regime was investigated. The capture time and dynamics were found to be governed by transitions between quantum states that were delocalized throughout the whole structure. It was found that the concept of a unique capture time was often not appropriate, since this time was not a constant that is characteristicc for a given quantum well. It was shown that the capture can be made faster by using structures with a larger ratio of well- to barrier-material.

AB - Carrier capture for InGaPA-based and InGaAlAs-based multiple quantum-well structures for the 1.55 μm wavelength regime was investigated. The capture time and dynamics were found to be governed by transitions between quantum states that were delocalized throughout the whole structure. It was found that the concept of a unique capture time was often not appropriate, since this time was not a constant that is characteristicc for a given quantum well. It was shown that the capture can be made faster by using structures with a larger ratio of well- to barrier-material.

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Structural dependence of carrier capture time in semiconductor quantum-well lasers

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