Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate

L. Karvonen; A. Saynatjoki; V. Dhaka; T. Haggren; S. Honkanen; S. Mehravar; R. Norwood; N. Peyghambarian; H. Lipsanen; K. Kieu

doi:10.1109/CLEOE-IQEC.2013.6800947

Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate

L. Karvonen, A. Saynatjoki, V. Dhaka, T. Haggren, S. Honkanen, S. Mehravar, R. Norwood, N. Peyghambarian, H. Lipsanen, K. Kieu

Research output: Contribution to conference › Paper › peer-review

Abstract

Semiconductor nanowires (NWs) are promising components for future generation optoelectronic devices and systems such as solar cells [1], lasers [2], light-emitting diodes [3], and photodetectors [4]. Group III-V semiconductors are materials of choice to fabricate such devices because they offer excellent optical and electrical properties including a direct band gap and high electron mobility, and most importantly, they can be grown via industrial mass scale production epitaxial growth techniques such as metal organic vapor phase epitaxy (MOVPE).

Original language	English (US)
DOIs	https://doi.org/10.1109/CLEOE-IQEC.2013.6800947
State	Published - 2013
Event	2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany Duration: May 12 2013 → May 16 2013

Other

Other	2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013
Country/Territory	Germany
City	Munich
Period	5/12/13 → 5/16/13

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/CLEOE-IQEC.2013.6800947

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Karvonen, L., Saynatjoki, A., Dhaka, V., Haggren, T., Honkanen, S., Mehravar, S., Norwood, R., Peyghambarian, N., Lipsanen, H., & Kieu, K. (2013). Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate. Paper presented at 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013, Munich, Germany. https://doi.org/10.1109/CLEOE-IQEC.2013.6800947

Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate. / Karvonen, L.; Saynatjoki, A.; Dhaka, V. et al.
2013. Paper presented at 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013, Munich, Germany.

Research output: Contribution to conference › Paper › peer-review

Karvonen, L, Saynatjoki, A, Dhaka, V, Haggren, T, Honkanen, S, Mehravar, S, Norwood, R , Peyghambarian, N, Lipsanen, H & Kieu, K 2013, 'Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate', Paper presented at 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013, Munich, Germany, 5/12/13 - 5/16/13. https://doi.org/10.1109/CLEOE-IQEC.2013.6800947

Karvonen L, Saynatjoki A, Dhaka V, Haggren T, Honkanen S, Mehravar S et al.. Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate. 2013. Paper presented at 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013, Munich, Germany. doi: 10.1109/CLEOE-IQEC.2013.6800947

@conference{eb61293349f944c58e982a96418c9e1c,

title = "Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate",

abstract = "Semiconductor nanowires (NWs) are promising components for future generation optoelectronic devices and systems such as solar cells [1], lasers [2], light-emitting diodes [3], and photodetectors [4]. Group III-V semiconductors are materials of choice to fabricate such devices because they offer excellent optical and electrical properties including a direct band gap and high electron mobility, and most importantly, they can be grown via industrial mass scale production epitaxial growth techniques such as metal organic vapor phase epitaxy (MOVPE).",

author = "L. Karvonen and A. Saynatjoki and V. Dhaka and T. Haggren and S. Honkanen and S. Mehravar and R. Norwood and N. Peyghambarian and H. Lipsanen and K. Kieu",

year = "2013",

doi = "10.1109/CLEOE-IQEC.2013.6800947",

language = "English (US)",

note = "2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 ; Conference date: 12-05-2013 Through 16-05-2013",

}

TY - CONF

T1 - Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate

AU - Karvonen, L.

AU - Saynatjoki, A.

AU - Dhaka, V.

AU - Haggren, T.

AU - Honkanen, S.

AU - Mehravar, S.

AU - Norwood, R.

AU - Peyghambarian, N.

AU - Lipsanen, H.

AU - Kieu, K.

PY - 2013

Y1 - 2013

N2 - Semiconductor nanowires (NWs) are promising components for future generation optoelectronic devices and systems such as solar cells [1], lasers [2], light-emitting diodes [3], and photodetectors [4]. Group III-V semiconductors are materials of choice to fabricate such devices because they offer excellent optical and electrical properties including a direct band gap and high electron mobility, and most importantly, they can be grown via industrial mass scale production epitaxial growth techniques such as metal organic vapor phase epitaxy (MOVPE).

AB - Semiconductor nanowires (NWs) are promising components for future generation optoelectronic devices and systems such as solar cells [1], lasers [2], light-emitting diodes [3], and photodetectors [4]. Group III-V semiconductors are materials of choice to fabricate such devices because they offer excellent optical and electrical properties including a direct band gap and high electron mobility, and most importantly, they can be grown via industrial mass scale production epitaxial growth techniques such as metal organic vapor phase epitaxy (MOVPE).

UR - http://www.scopus.com/inward/record.url?scp=84900297814&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84900297814&partnerID=8YFLogxK

U2 - 10.1109/CLEOE-IQEC.2013.6800947

DO - 10.1109/CLEOE-IQEC.2013.6800947

M3 - Paper

AN - SCOPUS:84900297814

T2 - 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013

Y2 - 12 May 2013 through 16 May 2013

ER -

Strong two-photon excitation fluorescence from GaAs and InP nanowires on glass substrate

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