Abstract
A new strip-loaded structure for ion-exchanged waveguide amplifiers in Er3+-doped glass is suggested. The fabrication of these waveguides lacks steps such as mask deposition and burial process that can be critical for some glasses. A simple numerical modeling shows that similar, or even higher, gain values as in ion-exchanged buried waveguides can be achieved. Preliminary experimental data for the fabrication of the strip-loaded structure are also reported.
Original language | English (US) |
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Pages (from-to) | 122-128 |
Number of pages | 7 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3622 |
State | Published - 1999 |
Event | Proceedings of the 1999 Rare-Earth-Doped Materials and Devices III - San Jose, CA, USA Duration: Jan 27 1999 → Jan 28 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering