Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon array

Y. H. Lee; M. Warren; G. R. Olbright; H. M. Gibbs; N. Peyghambarian; T. Venkatesan; J. S. Smith; A. Yariv

doi:10.1063/1.96710

Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon array

Y. H. Lee, M. Warren, G. R. Olbright, H. M. Gibbs, N. Peyghambarian, T. Venkatesan, J. S. Smith, A. Yariv

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26 Scopus citations

Abstract

Fast recovery (<200 ps) of an optical gate at room temperature in a GaAs étalon is observed by eliminating the top AlGaAs window and defining 9×9 μm² pixels. This recovery time is at least an order of magnitude shorter than that for previous étalons consisting of AlGaAs/GaAs/AlGaAs heterostructures. The fast recovery is attributed to faster surface recombination of carriers at the GaAs-dielectric mirror interface as compared to that at a GaAs-AlGaAs interface.

Original language	English (US)
Pages (from-to)	754-756
Number of pages	3
Journal	Applied Physics Letters Applied Physics Letters
Volume	48
Issue number	12
DOIs	https://doi.org/10.1063/1.96710
State	Published - 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.96710

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@article{6139f40fabad47db926422b41feefff9,

title = "Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs {\'e}talon array",

abstract = "Fast recovery (<200 ps) of an optical gate at room temperature in a GaAs {\'e}talon is observed by eliminating the top AlGaAs window and defining 9×9 μm2 pixels. This recovery time is at least an order of magnitude shorter than that for previous {\'e}talons consisting of AlGaAs/GaAs/AlGaAs heterostructures. The fast recovery is attributed to faster surface recombination of carriers at the GaAs-dielectric mirror interface as compared to that at a GaAs-AlGaAs interface.",

author = "Lee, {Y. H.} and M. Warren and Olbright, {G. R.} and Gibbs, {H. M.} and N. Peyghambarian and T. Venkatesan and Smith, {J. S.} and A. Yariv",

year = "1986",

doi = "10.1063/1.96710",

language = "English (US)",

volume = "48",

pages = "754--756",

journal = "Applied Physics Letters Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

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TY - JOUR

T1 - Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon array

AU - Lee, Y. H.

AU - Warren, M.

AU - Olbright, G. R.

AU - Gibbs, H. M.

AU - Peyghambarian, N.

AU - Venkatesan, T.

AU - Smith, J. S.

AU - Yariv, A.

PY - 1986

Y1 - 1986

N2 - Fast recovery (<200 ps) of an optical gate at room temperature in a GaAs étalon is observed by eliminating the top AlGaAs window and defining 9×9 μm2 pixels. This recovery time is at least an order of magnitude shorter than that for previous étalons consisting of AlGaAs/GaAs/AlGaAs heterostructures. The fast recovery is attributed to faster surface recombination of carriers at the GaAs-dielectric mirror interface as compared to that at a GaAs-AlGaAs interface.

AB - Fast recovery (<200 ps) of an optical gate at room temperature in a GaAs étalon is observed by eliminating the top AlGaAs window and defining 9×9 μm2 pixels. This recovery time is at least an order of magnitude shorter than that for previous étalons consisting of AlGaAs/GaAs/AlGaAs heterostructures. The fast recovery is attributed to faster surface recombination of carriers at the GaAs-dielectric mirror interface as compared to that at a GaAs-AlGaAs interface.

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DO - 10.1063/1.96710

M3 - Article

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VL - 48

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EP - 756

JO - Applied Physics Letters Applied Physics Letters

JF - Applied Physics Letters Applied Physics Letters

IS - 12

ER -

Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon array

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