“Strain-annealed” grain boundary engineering process investigated in Hastelloy-X

The mechanisms responsible for microstructure evolution during “strain-annealed” grain boundary engineering in Hastelloy-X have been investigated. GBE-quantifying parameters such as Σ3ⁿ density and fraction, triple junction density and fraction have been utilized to quantify the extent of GBE in the processed microstructures. “Strain-annealed” GBE process favors the formation of Σ3 boundaries through dissociation mechanism. When the amount of strain/cycle is high, the change in microstructure is limited and most of the Σ3 boundaries are remnant annealing twins from the initial microstructure. When the amount of strain/cycle decreases, more grain boundary migration takes place and majority of Σ3 boundaries start integrating into the GB network through dissociation mechanism. AGG is found to take place under special conditions: when (i) the dislocation density stored in the microstructure is low and (ii) the fraction of Σ3 boundaries that are integrated into the general grain boundary network is high. It is the preferential growth advantage of CSL boundaries that leads to abnormal grain growth.