Abstract
The static and dynamical characteristics of semiconductor narrow-band tunable resonant optical amplifiers as active filters and receivers are theoretically studied. Device performance at different cavity length, electrical bias level, incoming signal level, frequency de-tuning, and signal bandwidth are calculated for both ASK and FSK input. Nonlinear dynamical effects under high-Q conditions and high input power are also discussed. Through the coupled field and carrier dynamics, the amplifier response can be monitored by the amplifier terminal voltage. We compare the calculations with experimental results where the amplifier is used as a tunable receiver.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 73-83 |
| Number of pages | 11 |
| Journal | Journal of Lightwave Technology |
| Volume | 9 |
| Issue number | 1 |
| DOIs | |
| State | Published - 1991 |
| Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics