TY - GEN
T1 - Sputter deposited ZnTe/ZnSe/ZnO heterojunctions for photovoltaic applications
AU - Akpa, O.
AU - Shaik, S.
AU - Thompson, T.
AU - Isaacs-Smith, T.
AU - Anderson, P.
AU - Seraphin, S.
AU - Das, K.
PY - 2010
Y1 - 2010
N2 - Films of ZnTe, ZnSe, and ZnO were deposited on (100) Si by RF magnetron sputtering from stoichiometric ZnTe, ZnSe, and ZnO targets for the purpose of fabricating a ZnTe/ZnSe heterojunction. Rutherford back scattering (RBS) analysis yielded a composition of Zn1.0Te1.0 for ZnTe, Zn1.1Se1.2 for ZnSe, and Zn1.0O0.8 for ZnO which indicates that near-stoichiometric films were obtained. Transmission electron microscopy (TEM) of cross-sectional samples established that the films were polycrystalline in nature. Heterostructures were grown on ZnO coated low resistivity n-type Si wafer. The heterojunctions consisted of a ∼65 nm layer of ZnSe, to serve as an absorber layer and ∼40 nm of ZnTe as a window layer. The heterojunction wafer was diced into 1 cm2 samples. A Pt back contact was deposited on the Si. The top surface of the junction was patterned with a contact leaving two, 0.25 cm × 0.65 cm ZnTe windows exposed. Both the top and bottom contacts were annealed at 350° C under N2 atmosphere for 5 min. Under 120 W halogen lamp illumination the junction showed a photovoltaic response. Between the top Al and back Pt, the device produced an approximate open-circuit voltage (VOC) of 600 mV as measured with a high impendence voltmeter.
AB - Films of ZnTe, ZnSe, and ZnO were deposited on (100) Si by RF magnetron sputtering from stoichiometric ZnTe, ZnSe, and ZnO targets for the purpose of fabricating a ZnTe/ZnSe heterojunction. Rutherford back scattering (RBS) analysis yielded a composition of Zn1.0Te1.0 for ZnTe, Zn1.1Se1.2 for ZnSe, and Zn1.0O0.8 for ZnO which indicates that near-stoichiometric films were obtained. Transmission electron microscopy (TEM) of cross-sectional samples established that the films were polycrystalline in nature. Heterostructures were grown on ZnO coated low resistivity n-type Si wafer. The heterojunctions consisted of a ∼65 nm layer of ZnSe, to serve as an absorber layer and ∼40 nm of ZnTe as a window layer. The heterojunction wafer was diced into 1 cm2 samples. A Pt back contact was deposited on the Si. The top surface of the junction was patterned with a contact leaving two, 0.25 cm × 0.65 cm ZnTe windows exposed. Both the top and bottom contacts were annealed at 350° C under N2 atmosphere for 5 min. Under 120 W halogen lamp illumination the junction showed a photovoltaic response. Between the top Al and back Pt, the device produced an approximate open-circuit voltage (VOC) of 600 mV as measured with a high impendence voltmeter.
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U2 - 10.1109/PVSC.2010.5616303
DO - 10.1109/PVSC.2010.5616303
M3 - Conference contribution
AN - SCOPUS:78650130563
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1897
EP - 1901
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -