Spin transfer induced coherent microwave emission with large power from nanoscale MgO tunnel junctions

D. Houssameddine, S. H. Florez, J. A. Katine, J. P. Michel, U. Ebels, D. Mauri, O. Ozatay, B. Delaet, B. Viala, L. Folks, B. D. Terris, M. C. Cyrille

Research output: Contribution to journalArticlepeer-review

124 Scopus citations

Abstract

In low resistance-area product MgO magnetic tunnel junction nanopillars, we observe high integrated power (up to 43 nW), narrow linewidth (down to 10 MHz), spin transfer induced microwave emission at frequencies up to 14 GHz due to precession of the free layer magnetization at room temperature. Although all devices were fabricated on the same wafer, they present bimodal transport and precessional characteristics. The devices in which the narrowest linewidths were observed exhibited low resistance and tunneling magnetoresistance (30%), while maintaining large integrated power.

Original languageEnglish (US)
Article number022505
JournalApplied Physics Letters
Volume93
Issue number2
DOIs
StatePublished - Jul 14 2008
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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