Spin transfer induced coherent microwave emission with large power from nanoscale MgO tunnel junctions

D. Houssameddine; S. H. Florez; J. A. Katine; J. P. Michel; U. Ebels; D. Mauri; O. Ozatay; B. Delaet; B. Viala; L. Folks; B. D. Terris; M. C. Cyrille

doi:10.1063/1.2956418

Spin transfer induced coherent microwave emission with large power from nanoscale MgO tunnel junctions

D. Houssameddine, S. H. Florez, J. A. Katine, J. P. Michel, U. Ebels, D. Mauri, O. Ozatay, B. Delaet, B. Viala, L. Folks, B. D. Terris, M. C. Cyrille

Research output: Contribution to journal › Article › peer-review

124 Scopus citations

Abstract

In low resistance-area product MgO magnetic tunnel junction nanopillars, we observe high integrated power (up to 43 nW), narrow linewidth (down to 10 MHz), spin transfer induced microwave emission at frequencies up to 14 GHz due to precession of the free layer magnetization at room temperature. Although all devices were fabricated on the same wafer, they present bimodal transport and precessional characteristics. The devices in which the narrowest linewidths were observed exhibited low resistance and tunneling magnetoresistance (30%), while maintaining large integrated power.

Original language	English (US)
Article number	022505
Journal	Applied Physics Letters
Volume	93
Issue number	2
DOIs	https://doi.org/10.1063/1.2956418
State	Published - Jul 14 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2956418

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Spin transfer induced coherent microwave emission with large power from nanoscale MgO tunnel junctions. / Houssameddine, D.; Florez, S. H.; Katine, J. A.; Michel, J. P.; Ebels, U.; Mauri, D.; Ozatay, O.; Delaet, B.; Viala, B.; Folks, L.; Terris, B. D.; Cyrille, M. C.

In: Applied Physics Letters, Vol. 93, No. 2, 022505, 14.07.2008.

Research output: Contribution to journal › Article › peer-review

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title = "Spin transfer induced coherent microwave emission with large power from nanoscale MgO tunnel junctions",

abstract = "In low resistance-area product MgO magnetic tunnel junction nanopillars, we observe high integrated power (up to 43 nW), narrow linewidth (down to 10 MHz), spin transfer induced microwave emission at frequencies up to 14 GHz due to precession of the free layer magnetization at room temperature. Although all devices were fabricated on the same wafer, they present bimodal transport and precessional characteristics. The devices in which the narrowest linewidths were observed exhibited low resistance and tunneling magnetoresistance (30%), while maintaining large integrated power.",

author = "D. Houssameddine and Florez, {S. H.} and Katine, {J. A.} and Michel, {J. P.} and U. Ebels and D. Mauri and O. Ozatay and B. Delaet and B. Viala and L. Folks and Terris, {B. D.} and Cyrille, {M. C.}",

note = "Funding Information: This work was supported in part by the French National Research Agency (ANR) through the program CARNOT as well as by OSEO/ANVAR No. A0503013.",

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doi = "10.1063/1.2956418",

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AU - Houssameddine, D.

AU - Florez, S. H.

AU - Katine, J. A.

AU - Michel, J. P.

AU - Ebels, U.

AU - Mauri, D.

AU - Ozatay, O.

AU - Delaet, B.

AU - Viala, B.

AU - Folks, L.

AU - Terris, B. D.

AU - Cyrille, M. C.

N1 - Funding Information: This work was supported in part by the French National Research Agency (ANR) through the program CARNOT as well as by OSEO/ANVAR No. A0503013.

PY - 2008/7/14

Y1 - 2008/7/14

N2 - In low resistance-area product MgO magnetic tunnel junction nanopillars, we observe high integrated power (up to 43 nW), narrow linewidth (down to 10 MHz), spin transfer induced microwave emission at frequencies up to 14 GHz due to precession of the free layer magnetization at room temperature. Although all devices were fabricated on the same wafer, they present bimodal transport and precessional characteristics. The devices in which the narrowest linewidths were observed exhibited low resistance and tunneling magnetoresistance (30%), while maintaining large integrated power.

AB - In low resistance-area product MgO magnetic tunnel junction nanopillars, we observe high integrated power (up to 43 nW), narrow linewidth (down to 10 MHz), spin transfer induced microwave emission at frequencies up to 14 GHz due to precession of the free layer magnetization at room temperature. Although all devices were fabricated on the same wafer, they present bimodal transport and precessional characteristics. The devices in which the narrowest linewidths were observed exhibited low resistance and tunneling magnetoresistance (30%), while maintaining large integrated power.

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Spin transfer induced coherent microwave emission with large power from nanoscale MgO tunnel junctions

Abstract

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