Spin-polarized transport in hybrid (Zn,Cr)Te/Al 2O 3/Co magnetic tunnel junctions

W. G. Wang, C. Ni, T. Moriyama, J. Wan, E. Nowak, John Q. Xiao

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26 Scopus citations


Tunnel magnetoresistance (TMR) of 21% is observed at low temperature in hybrid magnetic tunnel junctions (MTJs) composed of a magnetic semiconductor (Zn,Cr)Te and Co electrodes separated by an alumina barrier. The TMR is observed up to 250 K, which is a considerable improvement over previous work on MTJs with semiconductor electrodes. The temperature and bias dependence of the TMR are consistent with a transport model involving spin-polarized tunneling and spin-independent hopping through impurity states.

Original languageEnglish (US)
Article number202501
JournalApplied Physics Letters
Issue number20
StatePublished - May 15 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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