Spin-polarized transport in hybrid (Zn,Cr)Te/Al 2O 3/Co magnetic tunnel junctions

W. G. Wang; C. Ni; T. Moriyama; J. Wan; E. Nowak; John Q. Xiao

doi:10.1063/1.2205177

Spin-polarized transport in hybrid (Zn,Cr)Te/Al ₂O ₃/Co magnetic tunnel junctions

W. G. Wang, C. Ni, T. Moriyama, J. Wan, E. Nowak, John Q. Xiao

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Tunnel magnetoresistance (TMR) of 21% is observed at low temperature in hybrid magnetic tunnel junctions (MTJs) composed of a magnetic semiconductor (Zn,Cr)Te and Co electrodes separated by an alumina barrier. The TMR is observed up to 250 K, which is a considerable improvement over previous work on MTJs with semiconductor electrodes. The temperature and bias dependence of the TMR are consistent with a transport model involving spin-polarized tunneling and spin-independent hopping through impurity states.

Original language	English (US)
Article number	202501
Journal	Applied Physics Letters
Volume	88
Issue number	20
DOIs	https://doi.org/10.1063/1.2205177
State	Published - May 15 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2205177

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title = "Spin-polarized transport in hybrid (Zn,Cr)Te/Al 2O 3/Co magnetic tunnel junctions",

abstract = "Tunnel magnetoresistance (TMR) of 21% is observed at low temperature in hybrid magnetic tunnel junctions (MTJs) composed of a magnetic semiconductor (Zn,Cr)Te and Co electrodes separated by an alumina barrier. The TMR is observed up to 250 K, which is a considerable improvement over previous work on MTJs with semiconductor electrodes. The temperature and bias dependence of the TMR are consistent with a transport model involving spin-polarized tunneling and spin-independent hopping through impurity states.",

author = "Wang, {W. G.} and C. Ni and T. Moriyama and J. Wan and E. Nowak and Xiao, {John Q.}",

note = "Funding Information: This work was supported by NSF DMR Grant No. 0405-136.",

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doi = "10.1063/1.2205177",

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T1 - Spin-polarized transport in hybrid (Zn,Cr)Te/Al 2O 3/Co magnetic tunnel junctions

AU - Wang, W. G.

AU - Ni, C.

AU - Moriyama, T.

AU - Wan, J.

AU - Nowak, E.

AU - Xiao, John Q.

N1 - Funding Information: This work was supported by NSF DMR Grant No. 0405-136.

PY - 2006/5/15

Y1 - 2006/5/15

N2 - Tunnel magnetoresistance (TMR) of 21% is observed at low temperature in hybrid magnetic tunnel junctions (MTJs) composed of a magnetic semiconductor (Zn,Cr)Te and Co electrodes separated by an alumina barrier. The TMR is observed up to 250 K, which is a considerable improvement over previous work on MTJs with semiconductor electrodes. The temperature and bias dependence of the TMR are consistent with a transport model involving spin-polarized tunneling and spin-independent hopping through impurity states.

AB - Tunnel magnetoresistance (TMR) of 21% is observed at low temperature in hybrid magnetic tunnel junctions (MTJs) composed of a magnetic semiconductor (Zn,Cr)Te and Co electrodes separated by an alumina barrier. The TMR is observed up to 250 K, which is a considerable improvement over previous work on MTJs with semiconductor electrodes. The temperature and bias dependence of the TMR are consistent with a transport model involving spin-polarized tunneling and spin-independent hopping through impurity states.

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JF - Applied Physics Letters

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Spin-polarized transport in hybrid (Zn,Cr)Te/Al ₂O ₃/Co magnetic tunnel junctions

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