Abstract
When a spin-polarized current is injected into a non-magnetic semiconductor, a transverse electric field known as Hall voltage is generated. By using a macroscopic diffusion equation, we derive the Hall voltage in the presence of both spin current and magnetic field. Novel features such as oscillating Hall signals as a function of the magnetic field and geometrical dependence of Hall signals are predicted.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 191-198 |
| Number of pages | 8 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 690 |
| State | Published - 2002 |
| Externally published | Yes |
| Event | Spintronics - Boston, MA, United States Duration: Nov 26 2001 → Nov 29 2001 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering