Spectral hole burning in the gain region of an inverted semiconductor

K. Meissner; B. Fluegel; H. Giessen; B. P. McGinnis; A. Paul; R. Binder; S. W. Koch; N. Peyghambarian; M. Grün; C. Klingshirn

doi:10.1103/PhysRevB.48.15472

Spectral hole burning in the gain region of an inverted semiconductor

K. Meissner, B. Fluegel, H. Giessen, B. P. McGinnis, A. Paul, R. Binder, S. W. Koch, N. Peyghambarian, M. Grün, C. Klingshirn

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We report on the observation and numerical calculations of femtosecond gain dynamics in an optically excited, CdSe epitaxial sample at low temperature. Spectral hole burning is clearly observed around the pump as it is tuned through the gain region. The pump-probe experiments agree well with our theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrierLO-phonon scattering.

Original language	English (US)
Pages (from-to)	15472-15475
Number of pages	4
Journal	Physical Review B
Volume	48
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevB.48.15472
State	Published - 1993

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.48.15472

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title = "Spectral hole burning in the gain region of an inverted semiconductor",

abstract = "We report on the observation and numerical calculations of femtosecond gain dynamics in an optically excited, CdSe epitaxial sample at low temperature. Spectral hole burning is clearly observed around the pump as it is tuned through the gain region. The pump-probe experiments agree well with our theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrierLO-phonon scattering.",

author = "K. Meissner and B. Fluegel and H. Giessen and McGinnis, {B. P.} and A. Paul and R. Binder and Koch, {S. W.} and N. Peyghambarian and M. Gr{\"u}n and C. Klingshirn",

year = "1993",

doi = "10.1103/PhysRevB.48.15472",

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T1 - Spectral hole burning in the gain region of an inverted semiconductor

AU - Meissner, K.

AU - Fluegel, B.

AU - Giessen, H.

AU - McGinnis, B. P.

AU - Paul, A.

AU - Binder, R.

AU - Koch, S. W.

AU - Peyghambarian, N.

AU - Grün, M.

AU - Klingshirn, C.

PY - 1993

Y1 - 1993

N2 - We report on the observation and numerical calculations of femtosecond gain dynamics in an optically excited, CdSe epitaxial sample at low temperature. Spectral hole burning is clearly observed around the pump as it is tuned through the gain region. The pump-probe experiments agree well with our theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrierLO-phonon scattering.

AB - We report on the observation and numerical calculations of femtosecond gain dynamics in an optically excited, CdSe epitaxial sample at low temperature. Spectral hole burning is clearly observed around the pump as it is tuned through the gain region. The pump-probe experiments agree well with our theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrierLO-phonon scattering.

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U2 - 10.1103/PhysRevB.48.15472

DO - 10.1103/PhysRevB.48.15472

M3 - Article

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SP - 15472

EP - 15475

JO - Physical Review B

JF - Physical Review B

IS - 20

ER -

Spectral hole burning in the gain region of an inverted semiconductor

Abstract

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