Spectral hole burning and gain saturation in short-cavity semiconductor lasers

K. Henneberger, F. Herzel, S. W. Koch, R. Binder, A. E. Paul, D. Scott

Research output: Contribution to journalArticlepeer-review

36 Scopus citations


A coupled set of equations for carrier distributions and stimulated emission in a semiconductor laser is presented, based on a nonequilibrium Greens-function formulation. Carrier momentum-dependent dephasing caused by carrier-carrier scattering and frequency-dependent optical gain are shown to govern the interplay between carrier relaxation and stimulated recombination. Ignoring the interband Coulomb interaction, the coupled system of equations for the carrier distribution functions and the optical gain is solved self-consistently for a single-mode short-cavity semiconductor laser under steady-state operation conditions. Numerical results show spectral and kinetic hole burning as well as nonlinear gain saturation.

Original languageEnglish (US)
Pages (from-to)1853-1859
Number of pages7
JournalPhysical Review A
Issue number3
StatePublished - 1992

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


Dive into the research topics of 'Spectral hole burning and gain saturation in short-cavity semiconductor lasers'. Together they form a unique fingerprint.

Cite this