@inproceedings{edd8e94ae79a46c8b4fdba3667e474b3,
title = "Speciation during wet etching of III-V semiconductors",
abstract = "The concentration of volatile arsenic species above GaAs during etching with aqueous HF and HC1 was measured via mass spectrometry. The total arsenic detected above solutions with acid concentrations between 0.6 M and 28.9 M was consistently between 4 and 5 mg/m3. The mass fragments detected contained As-H and As-0 moieties. No volatile species containing gallium were detected. Inductively-coupled plasma mass spectrometry (ICP-MS) was performed on aqueous HF solutions and used with the vapor phase concentrations to close a mass balance on arsenic to within 1-2 nmol. Vapor phase species containing As-O bonds were produced by hydrolysis and increased with etching time. The hydrolysis of these species complicated the identification of specific products in the vapor phase.",
author = "A. Hinckley and E. Foster and T. Corley and Muscat, {A. J.}",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; 15th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2017 - 232nd ECS Meeting ; Conference date: 02-10-2017 Through 03-10-2017",
year = "2017",
doi = "10.1149/08002.0163ecst",
language = "English (US)",
isbn = "9781623324711",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "163--170",
editor = "Takeshi Hattori and Muscat, {Anthony J.} and Koichiro Saga and Paul Mertens and Novak, {Richard E.} and Jerzy Ruzyllo",
booktitle = "ECS Transactions",
edition = "2",
}