Source modeling and calculation of mask irradiance during EUV lithography condenser design

Lenny Laughlin, Jose M. Sasian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

EUV lithography condenser design requires a precise and efficient method for determining uniformity of irradiance on the mask plane. A new methodology is described and results for the method are compared to calculated values.

Original languageEnglish (US)
Title of host publicationInternational Optical Design Conference, IODC 2002
PublisherOptica Publishing Group (formerly OSA)
Pages125
Number of pages1
ISBN (Electronic)1557527148
StatePublished - 2002
EventInternational Optical Design Conference, IODC 2002 - Tucson, United States
Duration: Jun 3 2002Jun 5 2002

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceInternational Optical Design Conference, IODC 2002
Country/TerritoryUnited States
CityTucson
Period6/3/026/5/02

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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