Sol-gel derived RuO2-PZT-RuO2 ferroelectric capacitors

G. Teowee; J. M. Boulton; S. Hassan; K. McCarthy; F. McCarthy; T. J. Bukowski; T. P. Alexander; D. R. Uhlmann

doi:10.1080/10584589708221706

Sol-gel derived RuO₂-PZT-RuO₂ ferroelectric capacitors

G. Teowee, J. M. Boulton, S. Hassan, K. McCarthy, F. McCarthy, T. J. Bukowski, T. P. Alexander, D. R. Uhlmann

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

There has been a lot of attention on novel oxide electrodes, e.g., RuO₂, LaSrCoO₃, YBCO, for contacts to ferroelectric capacitors. Such devices were reported to yield fatigue-free behaviors which are crucial for implementation in ferroelectric memory technology. Typical Pt/PZT/Pt capacitors fatigue as fast as after 10⁴ cycles. In this study, sol-gel techniques are used to prepare both conducting RuO₂ and PZT 53/47 thin films. Conductivity of the RuO₂ films ranged was measured as 5 × 10^-4 Ω-cm. Oxidized Si and platinized Si wafers were used as the substrates; Si/ SiO₂/RuO₂/PZT/RuO₂ and Si/SiO₂/Pt/RuO₂/PZT/RuO₂/Pt and Si/SiO₂/Pt/PZT/Pt capacitors were obtained. The effect of RuO₂ electrode on microstructure, ferroelectric properties and leakage characteristics will be discussed.

Original language	English (US)
Pages (from-to)	287-295
Number of pages	9
Journal	Integrated Ferroelectrics
Volume	18
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589708221706
State	Published - 1997

Keywords

Fatigue
Ferroelectric capacitors
PZT 53/47
RuO films

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584589708221706

Cite this

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title = "Sol-gel derived RuO2-PZT-RuO2 ferroelectric capacitors",

abstract = "There has been a lot of attention on novel oxide electrodes, e.g., RuO2, LaSrCoO3, YBCO, for contacts to ferroelectric capacitors. Such devices were reported to yield fatigue-free behaviors which are crucial for implementation in ferroelectric memory technology. Typical Pt/PZT/Pt capacitors fatigue as fast as after 104 cycles. In this study, sol-gel techniques are used to prepare both conducting RuO2 and PZT 53/47 thin films. Conductivity of the RuO2 films ranged was measured as 5 × 10-4 Ω-cm. Oxidized Si and platinized Si wafers were used as the substrates; Si/ SiO2/RuO2/PZT/RuO2 and Si/SiO2/Pt/RuO2/PZT/RuO2/Pt and Si/SiO2/Pt/PZT/Pt capacitors were obtained. The effect of RuO2 electrode on microstructure, ferroelectric properties and leakage characteristics will be discussed.",

keywords = "Fatigue, Ferroelectric capacitors, PZT 53/47, RuO films",

author = "G. Teowee and Boulton, {J. M.} and S. Hassan and K. McCarthy and F. McCarthy and Bukowski, {T. J.} and Alexander, {T. P.} and Uhlmann, {D. R.}",

note = "Funding Information: The financial support of the Donnelly Corporation and the Air Force Office of Scientific Research is greatly appreciated.",

year = "1997",

doi = "10.1080/10584589708221706",

language = "English (US)",

volume = "18",

pages = "287--295",

journal = "Integrated Ferroelectrics",

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T1 - Sol-gel derived RuO2-PZT-RuO2 ferroelectric capacitors

AU - Teowee, G.

AU - Boulton, J. M.

AU - Hassan, S.

AU - McCarthy, K.

AU - McCarthy, F.

AU - Bukowski, T. J.

AU - Alexander, T. P.

AU - Uhlmann, D. R.

N1 - Funding Information: The financial support of the Donnelly Corporation and the Air Force Office of Scientific Research is greatly appreciated.

PY - 1997

Y1 - 1997

N2 - There has been a lot of attention on novel oxide electrodes, e.g., RuO2, LaSrCoO3, YBCO, for contacts to ferroelectric capacitors. Such devices were reported to yield fatigue-free behaviors which are crucial for implementation in ferroelectric memory technology. Typical Pt/PZT/Pt capacitors fatigue as fast as after 104 cycles. In this study, sol-gel techniques are used to prepare both conducting RuO2 and PZT 53/47 thin films. Conductivity of the RuO2 films ranged was measured as 5 × 10-4 Ω-cm. Oxidized Si and platinized Si wafers were used as the substrates; Si/ SiO2/RuO2/PZT/RuO2 and Si/SiO2/Pt/RuO2/PZT/RuO2/Pt and Si/SiO2/Pt/PZT/Pt capacitors were obtained. The effect of RuO2 electrode on microstructure, ferroelectric properties and leakage characteristics will be discussed.

AB - There has been a lot of attention on novel oxide electrodes, e.g., RuO2, LaSrCoO3, YBCO, for contacts to ferroelectric capacitors. Such devices were reported to yield fatigue-free behaviors which are crucial for implementation in ferroelectric memory technology. Typical Pt/PZT/Pt capacitors fatigue as fast as after 104 cycles. In this study, sol-gel techniques are used to prepare both conducting RuO2 and PZT 53/47 thin films. Conductivity of the RuO2 films ranged was measured as 5 × 10-4 Ω-cm. Oxidized Si and platinized Si wafers were used as the substrates; Si/ SiO2/RuO2/PZT/RuO2 and Si/SiO2/Pt/RuO2/PZT/RuO2/Pt and Si/SiO2/Pt/PZT/Pt capacitors were obtained. The effect of RuO2 electrode on microstructure, ferroelectric properties and leakage characteristics will be discussed.

KW - Fatigue

KW - Ferroelectric capacitors

KW - PZT 53/47

KW - RuO films

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