Sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 thin films

G. Teowee; K. C. McCarthy; F. S. McCarthy; D. G. Davis; J. T. Dawley; B. J.J. Zelinski; D. R. Uhlmann

Sol-gel derived Pb(Zn_1/3Nb_2/3)O₃-PbTiO₃ thin films

G. Teowee, K. C. McCarthy, F. S. McCarthy, D. G. Davis, J. T. Dawley, B. J.J. Zelinski, D. R. Uhlmann

Research output: Contribution to journal › Conference article › peer-review

Abstract

A series of sol-gel derived Pb(Zn_1/3Nb_2/3)O₃-PbTiO₃ (PZN-PT) films, with various PbTiO₃ contents, have been prepared on platinized Si wafers. The (1-x)PZN - xPT films fired to 700C became single phase perovskite for x ≥ 0.7. In the PZN-0.1PT films, the films still contain pyrochlore phase at a firing temperature of 850C; the perovskite phase appeared at a firing temperature of 800C. The dielectric constant increased with increasing PT content, with a peak in dielectric constant at x = 0.8. PZN-PT films with x = 0.8 exhibited dielectric constant, dissipation factor, remanent polarization and coercive field values of 600, 0.10,6 and 45 kV/cm respectively.

Original language	English (US)
Pages (from-to)	445-450
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	493
State	Published - 1998
Event	Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: Nov 30 1997 → Dec 4 1997

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{30bad369a0654f0aa69085b4aadc1d60,

title = "Sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 thin films",

abstract = "A series of sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) films, with various PbTiO3 contents, have been prepared on platinized Si wafers. The (1-x)PZN - xPT films fired to 700C became single phase perovskite for x ≥ 0.7. In the PZN-0.1PT films, the films still contain pyrochlore phase at a firing temperature of 850C; the perovskite phase appeared at a firing temperature of 800C. The dielectric constant increased with increasing PT content, with a peak in dielectric constant at x = 0.8. PZN-PT films with x = 0.8 exhibited dielectric constant, dissipation factor, remanent polarization and coercive field values of 600, 0.10,6 and 45 kV/cm respectively.",

author = "G. Teowee and McCarthy, {K. C.} and McCarthy, {F. S.} and Davis, {D. G.} and Dawley, {J. T.} and Zelinski, {B. J.J.} and Uhlmann, {D. R.}",

year = "1998",

language = "English (US)",

volume = "493",

pages = "445--450",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Symposium ; Conference date: 30-11-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 thin films

AU - Teowee, G.

AU - McCarthy, K. C.

AU - McCarthy, F. S.

AU - Davis, D. G.

AU - Dawley, J. T.

AU - Zelinski, B. J.J.

AU - Uhlmann, D. R.

PY - 1998

Y1 - 1998

N2 - A series of sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) films, with various PbTiO3 contents, have been prepared on platinized Si wafers. The (1-x)PZN - xPT films fired to 700C became single phase perovskite for x ≥ 0.7. In the PZN-0.1PT films, the films still contain pyrochlore phase at a firing temperature of 850C; the perovskite phase appeared at a firing temperature of 800C. The dielectric constant increased with increasing PT content, with a peak in dielectric constant at x = 0.8. PZN-PT films with x = 0.8 exhibited dielectric constant, dissipation factor, remanent polarization and coercive field values of 600, 0.10,6 and 45 kV/cm respectively.

AB - A series of sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) films, with various PbTiO3 contents, have been prepared on platinized Si wafers. The (1-x)PZN - xPT films fired to 700C became single phase perovskite for x ≥ 0.7. In the PZN-0.1PT films, the films still contain pyrochlore phase at a firing temperature of 850C; the perovskite phase appeared at a firing temperature of 800C. The dielectric constant increased with increasing PT content, with a peak in dielectric constant at x = 0.8. PZN-PT films with x = 0.8 exhibited dielectric constant, dissipation factor, remanent polarization and coercive field values of 600, 0.10,6 and 45 kV/cm respectively.

UR - http://www.scopus.com/inward/record.url?scp=0031701362&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031701362&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031701362

SN - 0272-9172

VL - 493

SP - 445

EP - 450

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Symposium

Y2 - 30 November 1997 through 4 December 1997

ER -

Sol-gel derived Pb(Zn_1/3Nb_2/3)O₃-PbTiO₃ thin films

Abstract

ASJC Scopus subject areas

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