Abstract
A series of sol-gel derived Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) films, with various PbTiO3 contents, have been prepared on platinized Si wafers. The (1-x)PZN - xPT films fired to 700C became single phase perovskite for x ≥ 0.7. In the PZN-0.1PT films, the films still contain pyrochlore phase at a firing temperature of 850C; the perovskite phase appeared at a firing temperature of 800C. The dielectric constant increased with increasing PT content, with a peak in dielectric constant at x = 0.8. PZN-PT films with x = 0.8 exhibited dielectric constant, dissipation factor, remanent polarization and coercive field values of 600, 0.10,6 and 45 kV/cm respectively.
Original language | English (US) |
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Pages (from-to) | 445-450 |
Number of pages | 6 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 493 |
State | Published - 1998 |
Event | Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: Nov 30 1997 → Dec 4 1997 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering