Sol-gel derived ferroelectric YMnO3 films

G. Teowee, K. C. McCarthy, F. S. McCarthy, B. H. Dietz, D. G. Davis, D. R. Uhlmann

Research output: Contribution to journalConference articlepeer-review

Abstract

Sol-gel derived YMnO3 films have been prepared on platinized Si wafers. Crystallization took place at firing temperatures above about 750 C. The crystallized films were very conductive. YMnO3 films exhibited a dielectric constant of 23, a remanent polarization of 1.0 μC/cm2 and a coercive field of 12 kV/cm, all measured at -33 C. The FE loop was lossy and elliptical at room temperature but became more distinct at lower measuring temperatures or at higher measuring frequencies.

Original languageEnglish (US)
Pages (from-to)327-332
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume495
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1997 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 30 1997Dec 4 1997

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Sol-gel derived ferroelectric YMnO3 films'. Together they form a unique fingerprint.

Cite this