Software enables optimized epi structure in a single wafer growth

Research output: Contribution to specialist publicationArticle


The Nonlinear Control Strategies of Tucson has won a Phase II STTR award from the U.S. Air Force to provide an enabling commercial software in optimizing epi structure in a single wafer growth. The practice in semiconductor materials growth has typically involved an estimation of the absorption-band edge via simple band-structure calculations followed by series of growth, packaging, and regrowth cycles. This problem has been addressed by demonstrating the ability to predict a semiconductor- laser input-output (L-I) characteristic based on fundamental principles without using adjustable fit parameters problem. The spectral lineshape at low external light illumination intensities yields photoluminescence (PL) spectra that provide invaluable feedback to the semiconductor-wafer grower on growth accuracy and quality. The predicted laser input-output characteristics were computed prior to the experimental measurement when a slight temperature elevation in the active region was allowed for.

Original languageEnglish (US)
Number of pages5
Specialist publicationLaser Focus World
StatePublished - Jul 2007

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Marketing
  • Electrical and Electronic Engineering


Dive into the research topics of 'Software enables optimized epi structure in a single wafer growth'. Together they form a unique fingerprint.

Cite this