Site-selective studies of erbium ion defects in thermally grown silicon oxides

Z. Fleischman, V. Dierolf, Z. Dong, Y. Zhang, M. White, R. Pafchek, M. Webster, T. Koch

Research output: Contribution to journalConference articlepeer-review


Using the site-selective technique of combined excitation emission spectroscopy (CEES), we have studied a variety of Er-doped silicon oxide layers and silicon-rich oxide (SRO) layers which contain silicon nanocrystals. With this technique we identified Er cluster defect sites which are created during thermal annealing and which dominate at high Er concentrations. We investigate the role that Si nanocrystals play in the relative abundance of these cluster sites. In attempts to reduce this clustering effect, we observed mixed results by modifying the growth procedure such that Er is already present in the silicon during oxide growth.

Original languageEnglish (US)
Pages (from-to)749-752
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number3
StatePublished - 2007
Event10th Europhysical Conference on Defects in Insulating Materials, EURODIM 2006 - Milano, Italy
Duration: Jul 10 2006Jul 14 2006

ASJC Scopus subject areas

  • Condensed Matter Physics


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