Single-exciton trapping in an electrostatically defined two-dimensional semiconductor quantum dot

Daniel N. Shanks, Fateme Mahdikhanysarvejahany, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. Leroy, John R. Schaibley

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Interlayer excitons (IXs) in two-dimensional semiconductors have long lifetimes and spin-valley coupled physics, with a long-standing goal of single-exciton trapping for valleytronic applications. In this work, we use a nanopatterned graphene gate to create an electrostatic IX trap. We measure a unique power-dependent blueshift of IX energy, where narrow linewidth emission exhibits discrete energy jumps. We attribute these jumps to quantized increases of the number occupancy of IXs within the trap and compare to a theoretical model to assign the lowest energy emission line to single-IX recombination.

Original languageEnglish (US)
Article numberL201401
JournalPhysical Review B
Volume106
Issue number20
DOIs
StatePublished - Nov 15 2022

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint

Dive into the research topics of 'Single-exciton trapping in an electrostatically defined two-dimensional semiconductor quantum dot'. Together they form a unique fingerprint.

Cite this