Simulations of ZnSe/GaAs heteroepitaxial growth

C. H. Grein; J. P. Faurie; V. Bousquet; E. Tournié; R. Benedek; T. De La Rubia

doi:10.1016/S0022-0248(96)01193-1

Simulations of ZnSe/GaAs heteroepitaxial growth

C. H. Grein
, J. P. Faurie
, V. Bousquet
, E. Tournié
, R. Benedek
, T. De La Rubia

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

The epitaxial growth of ZnSe on GaAs(0 0 1) is simulated by employing a hybrid approach based on molecular dynamics to describe the initial kinetic behavior of deposited adatoms and Monte Carlo displacements to account for subsequent equilibration. Stillinger-Weber potentials are employed to describe interatomic interactions. This method is well-suited to describe initial nucleation and growth. Results for a variety of growth temperatures and interface structures are presented.

Original language	English (US)
Pages (from-to)	258-267
Number of pages	10
Journal	Journal of Crystal Growth
Volume	178
Issue number	3
DOIs	https://doi.org/10.1016/S0022-0248(96)01193-1
State	Published - Jul 1997
Externally published	Yes

Keywords

Computer simulation
Epitaxial growth

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(96)01193-1

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title = "Simulations of ZnSe/GaAs heteroepitaxial growth",

abstract = "The epitaxial growth of ZnSe on GaAs(0 0 1) is simulated by employing a hybrid approach based on molecular dynamics to describe the initial kinetic behavior of deposited adatoms and Monte Carlo displacements to account for subsequent equilibration. Stillinger-Weber potentials are employed to describe interatomic interactions. This method is well-suited to describe initial nucleation and growth. Results for a variety of growth temperatures and interface structures are presented.",

keywords = "Computer simulation, Epitaxial growth",

author = "Grein, \{C. H.\} and Faurie, \{J. P.\} and V. Bousquet and E. Tourni{\'e} and R. Benedek and \{De La Rubia\}, T.",

year = "1997",

month = jul,

doi = "10.1016/S0022-0248(96)01193-1",

language = "English (US)",

volume = "178",

pages = "258--267",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Simulations of ZnSe/GaAs heteroepitaxial growth

AU - Grein, C. H.

AU - Faurie, J. P.

AU - Bousquet, V.

AU - Tournié, E.

AU - Benedek, R.

AU - De La Rubia, T.

PY - 1997/7

Y1 - 1997/7

N2 - The epitaxial growth of ZnSe on GaAs(0 0 1) is simulated by employing a hybrid approach based on molecular dynamics to describe the initial kinetic behavior of deposited adatoms and Monte Carlo displacements to account for subsequent equilibration. Stillinger-Weber potentials are employed to describe interatomic interactions. This method is well-suited to describe initial nucleation and growth. Results for a variety of growth temperatures and interface structures are presented.

AB - The epitaxial growth of ZnSe on GaAs(0 0 1) is simulated by employing a hybrid approach based on molecular dynamics to describe the initial kinetic behavior of deposited adatoms and Monte Carlo displacements to account for subsequent equilibration. Stillinger-Weber potentials are employed to describe interatomic interactions. This method is well-suited to describe initial nucleation and growth. Results for a variety of growth temperatures and interface structures are presented.

KW - Computer simulation

KW - Epitaxial growth

UR - https://www.scopus.com/pages/publications/0031187412

UR - https://www.scopus.com/pages/publications/0031187412#tab=citedBy

U2 - 10.1016/S0022-0248(96)01193-1

DO - 10.1016/S0022-0248(96)01193-1

M3 - Article

AN - SCOPUS:0031187412

SN - 0022-0248

VL - 178

SP - 258

EP - 267

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3

ER -

Simulations of ZnSe/GaAs heteroepitaxial growth

Abstract

Keywords

ASJC Scopus subject areas

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