Simulation and design of nanocircuits with resonant tunneling devices

Janet Meiling Wang; Bharat Sukhwani; Uday Padmanabhan; Dongsheng Ma; Kartik Sinha

doi:10.1109/TCSI.2007.895529

Simulation and design of nanocircuits with resonant tunneling devices

Janet Meiling Wang, Bharat Sukhwani, Uday Padmanabhan, Dongsheng Ma, Kartik Sinha

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

New nanotechnology-based devices are being researched to replace CMOS devices in order to overcome CMOS technology's scaling limitations. However, many such devices exhibit nonmonotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance. This paper proposes two new circuit simulation approaches that can effectively simulate nanotechnology devices with uncertain input sources and negative differential resistance problem. A new tool called NanoSim-RTD is developed based on the proposed new simulation techniques. The experimental results show a speedup of 1.48-37.1 times when compared with existing simulators. Further, this paper demonstrates a new way to design delay-insensitive nanocircuits, and the designs can be verified by using NanoSim-RTD.

Original language	English (US)
Pages (from-to)	1293-1304
Number of pages	12
Journal	IEEE Transactions on Circuits and Systems I: Regular Papers
Volume	54
Issue number	6
DOIs	https://doi.org/10.1109/TCSI.2007.895529
State	Published - Jun 2007

Keywords

Asynchronous
Bias-based
Resonant tunneling devices
Stepwise equivalent conductance

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/TCSI.2007.895529

Cite this

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title = "Simulation and design of nanocircuits with resonant tunneling devices",

abstract = "New nanotechnology-based devices are being researched to replace CMOS devices in order to overcome CMOS technology's scaling limitations. However, many such devices exhibit nonmonotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance. This paper proposes two new circuit simulation approaches that can effectively simulate nanotechnology devices with uncertain input sources and negative differential resistance problem. A new tool called NanoSim-RTD is developed based on the proposed new simulation techniques. The experimental results show a speedup of 1.48-37.1 times when compared with existing simulators. Further, this paper demonstrates a new way to design delay-insensitive nanocircuits, and the designs can be verified by using NanoSim-RTD.",

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T1 - Simulation and design of nanocircuits with resonant tunneling devices

AU - Wang, Janet Meiling

AU - Sukhwani, Bharat

AU - Padmanabhan, Uday

AU - Ma, Dongsheng

AU - Sinha, Kartik

PY - 2007/6

Y1 - 2007/6

N2 - New nanotechnology-based devices are being researched to replace CMOS devices in order to overcome CMOS technology's scaling limitations. However, many such devices exhibit nonmonotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance. This paper proposes two new circuit simulation approaches that can effectively simulate nanotechnology devices with uncertain input sources and negative differential resistance problem. A new tool called NanoSim-RTD is developed based on the proposed new simulation techniques. The experimental results show a speedup of 1.48-37.1 times when compared with existing simulators. Further, this paper demonstrates a new way to design delay-insensitive nanocircuits, and the designs can be verified by using NanoSim-RTD.

AB - New nanotechnology-based devices are being researched to replace CMOS devices in order to overcome CMOS technology's scaling limitations. However, many such devices exhibit nonmonotonic I-V characteristics and uncertain properties which lead to the negative differential resistance (NDR) problem and the chaotic performance. This paper proposes two new circuit simulation approaches that can effectively simulate nanotechnology devices with uncertain input sources and negative differential resistance problem. A new tool called NanoSim-RTD is developed based on the proposed new simulation techniques. The experimental results show a speedup of 1.48-37.1 times when compared with existing simulators. Further, this paper demonstrates a new way to design delay-insensitive nanocircuits, and the designs can be verified by using NanoSim-RTD.

KW - Asynchronous

KW - Bias-based

KW - Resonant tunneling devices

KW - Stepwise equivalent conductance

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Simulation and design of nanocircuits with resonant tunneling devices

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Keywords

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