Simple Narrow-Linewidth 1-5 &#X03Bc;M Ingaasp dfb External-Cavity Laser

A. R. Chraplyvy; K. Y. Liou; R. W. Tkach; G. Eisenstein; Y. K. Jhee; T. L. Koch; P. J. Anthony; U. K. Chakrabarti

doi:10.1049/el:19860060

Simple Narrow-Linewidth 1-5 &#X03Bc;M Ingaasp dfb External-Cavity Laser

A. R. Chraplyvy, K. Y. Liou, R. W. Tkach, G. Eisenstein, Y. K. Jhee, T. L. Koch, P. J. Anthony, U. K. Chakrabarti

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

An external-cavity laser consisting of a 1-5μm-wavelength antireflection-coated DFB laser chip, a microscope objective and a mirror provides a stable, single-frequency, narrow-linewidth (Δf = 40 kHz) output. Because the laser operates in the strong feedback regime, it is immune to external optical perturbations. Single-longitudinal-mode operation is maintained by the DFB grating, and the linewidth is reduced by the extended passive cavity.

Original language	English (US)
Pages (from-to)	88-90
Number of pages	3
Journal	Electronics Letters
Volume	22
Issue number	2
DOIs	https://doi.org/10.1049/el:19860060
State	Published - 1986
Externally published	Yes

Keywords

Optics
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19860060

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@article{0487574ddae74b408375c7b75e929861,

title = "Simple Narrow-Linewidth 1-5 μM Ingaasp dfb External-Cavity Laser",

abstract = "An external-cavity laser consisting of a 1-5μm-wavelength antireflection-coated DFB laser chip, a microscope objective and a mirror provides a stable, single-frequency, narrow-linewidth (Δf = 40 kHz) output. Because the laser operates in the strong feedback regime, it is immune to external optical perturbations. Single-longitudinal-mode operation is maintained by the DFB grating, and the linewidth is reduced by the extended passive cavity.",

keywords = "Optics, Semiconductor lasers",

author = "Chraplyvy, {A. R.} and Liou, {K. Y.} and Tkach, {R. W.} and G. Eisenstein and Jhee, {Y. K.} and Koch, {T. L.} and Anthony, {P. J.} and Chakrabarti, {U. K.}",

year = "1986",

doi = "10.1049/el:19860060",

language = "English (US)",

volume = "22",

pages = "88--90",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "2",

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TY - JOUR

T1 - Simple Narrow-Linewidth 1-5 μM Ingaasp dfb External-Cavity Laser

AU - Chraplyvy, A. R.

AU - Liou, K. Y.

AU - Tkach, R. W.

AU - Eisenstein, G.

AU - Jhee, Y. K.

AU - Koch, T. L.

AU - Anthony, P. J.

AU - Chakrabarti, U. K.

PY - 1986

Y1 - 1986

N2 - An external-cavity laser consisting of a 1-5μm-wavelength antireflection-coated DFB laser chip, a microscope objective and a mirror provides a stable, single-frequency, narrow-linewidth (Δf = 40 kHz) output. Because the laser operates in the strong feedback regime, it is immune to external optical perturbations. Single-longitudinal-mode operation is maintained by the DFB grating, and the linewidth is reduced by the extended passive cavity.

AB - An external-cavity laser consisting of a 1-5μm-wavelength antireflection-coated DFB laser chip, a microscope objective and a mirror provides a stable, single-frequency, narrow-linewidth (Δf = 40 kHz) output. Because the laser operates in the strong feedback regime, it is immune to external optical perturbations. Single-longitudinal-mode operation is maintained by the DFB grating, and the linewidth is reduced by the extended passive cavity.

KW - Optics

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0022586621&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022586621&partnerID=8YFLogxK

U2 - 10.1049/el:19860060

DO - 10.1049/el:19860060

M3 - Article

AN - SCOPUS:0022586621

SN - 0013-5194

VL - 22

SP - 88

EP - 90

JO - Electronics Letters

JF - Electronics Letters

IS - 2

ER -

Simple Narrow-Linewidth 1-5 &#X03Bc;M Ingaasp dfb External-Cavity Laser

Abstract

Keywords

ASJC Scopus subject areas

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