Silicon sensor quantum efficiency, reflectance, and calibration

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations


Quantum Efficiency (QE) is one of the most important parameters when either evaluating or using an imaging sensor for scientific applications. For back illuminated CCD and CMOS imagers, QE is determined by temperature, antireflection (AR) coatings, backside charging mechanisms, and silicon thickness. The accurate and precise measurement of QE requires careful consideration of illumination, temperature, calibration standards, optics, electronic equipment and components, and scattered light. QE is also closely related to the reflectance from the sensor surface. We present in this paper a study of the QE and reflectance from a variety of sensors used for astronomical imaging. Particular attention is given to precise calibration, temperature effects, models vs. measurements, and measurement techniques. We discuss all these issues and how they relate to the measurement and actual performance of sensors with different areas, thicknesses, and AR coatings.

Original languageEnglish (US)
Title of host publicationHigh Energy, Optical, and Infrared Detectors for Astronomy VI
ISBN (Print)9780819496225
StatePublished - 2014
EventHigh Energy, Optical, and Infrared Detectors for Astronomy VI - Montreal, QC, Canada
Duration: Jun 22 2014Jun 25 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherHigh Energy, Optical, and Infrared Detectors for Astronomy VI
CityMontreal, QC


  • CCDs
  • CMOS imagers
  • Detectors
  • Imaging
  • Quantum efficiency
  • Telescopes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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