Silicon dioxide as a high temperature stabilizer for silver films

P. Hollingsworth Smith; H. Gurev

doi:10.1016/0040-6090(77)90221-8

Silicon dioxide as a high temperature stabilizer for silver films

P. Hollingsworth Smith
, H. Gurev

Lunar and Planetary Lab

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Silver films cannot at present be used as high temperature reflectors because of severe agglomeration in the presence of oxygen at temperatures in excess of 200 °C. Cr₂O₃, Al₂O₃, SiO₃ and CrO_x were tested for their effectiveness as thin barrier layers, and SiO₂ is the best of those tested. The use of SiO₂ allows the process of hole healing to compete with the normal hole growth process. Hole healing does not last indefinitely but is superseded by a slower rate hole growth process with an activation energy of 49 kcal mol^-1. Because of this last mechanism, stabilized silver is less than 1% transmitting after 50 h at 650 °C in air, whereas bare silver agglomerates to 66% transmittance after only 3 min under the same conditions. Therefore 500 Å SiO₂ films can be used as long term stabilizers for silver films in oxygen atmospheres with temperatures of up to 650 °C.

Original language	English (US)
Pages (from-to)	159-168
Number of pages	10
Journal	Thin Solid Films
Volume	45
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(77)90221-8
State	Published - Aug 15 1977

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(77)90221-8

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@article{53097701849646dfb88987305f389f02,

title = "Silicon dioxide as a high temperature stabilizer for silver films",

abstract = "Silver films cannot at present be used as high temperature reflectors because of severe agglomeration in the presence of oxygen at temperatures in excess of 200 °C. Cr2O3, Al2O3, SiO3 and CrOx were tested for their effectiveness as thin barrier layers, and SiO2 is the best of those tested. The use of SiO2 allows the process of hole healing to compete with the normal hole growth process. Hole healing does not last indefinitely but is superseded by a slower rate hole growth process with an activation energy of 49 kcal mol-1. Because of this last mechanism, stabilized silver is less than 1\% transmitting after 50 h at 650 °C in air, whereas bare silver agglomerates to 66\% transmittance after only 3 min under the same conditions. Therefore 500 {\AA} SiO2 films can be used as long term stabilizers for silver films in oxygen atmospheres with temperatures of up to 650 °C.",

author = "Smith, \{P. Hollingsworth\} and H. Gurev",

note = "Funding Information: This work was supportedb y the National ScienceF oundationM, aterial ScienceD ivision, under grant DMR 75-01267.W e wish to acknowledgeth e assistancoe f Ross Potoff in samplep reparationan d valuabled iscussionsw ith ProfessoBr . O. Seraphin.",

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doi = "10.1016/0040-6090(77)90221-8",

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T1 - Silicon dioxide as a high temperature stabilizer for silver films

AU - Smith, P. Hollingsworth

AU - Gurev, H.

N1 - Funding Information: This work was supportedb y the National ScienceF oundationM, aterial ScienceD ivision, under grant DMR 75-01267.W e wish to acknowledgeth e assistancoe f Ross Potoff in samplep reparationan d valuabled iscussionsw ith ProfessoBr . O. Seraphin.

PY - 1977/8/15

Y1 - 1977/8/15

N2 - Silver films cannot at present be used as high temperature reflectors because of severe agglomeration in the presence of oxygen at temperatures in excess of 200 °C. Cr2O3, Al2O3, SiO3 and CrOx were tested for their effectiveness as thin barrier layers, and SiO2 is the best of those tested. The use of SiO2 allows the process of hole healing to compete with the normal hole growth process. Hole healing does not last indefinitely but is superseded by a slower rate hole growth process with an activation energy of 49 kcal mol-1. Because of this last mechanism, stabilized silver is less than 1% transmitting after 50 h at 650 °C in air, whereas bare silver agglomerates to 66% transmittance after only 3 min under the same conditions. Therefore 500 Å SiO2 films can be used as long term stabilizers for silver films in oxygen atmospheres with temperatures of up to 650 °C.

AB - Silver films cannot at present be used as high temperature reflectors because of severe agglomeration in the presence of oxygen at temperatures in excess of 200 °C. Cr2O3, Al2O3, SiO3 and CrOx were tested for their effectiveness as thin barrier layers, and SiO2 is the best of those tested. The use of SiO2 allows the process of hole healing to compete with the normal hole growth process. Hole healing does not last indefinitely but is superseded by a slower rate hole growth process with an activation energy of 49 kcal mol-1. Because of this last mechanism, stabilized silver is less than 1% transmitting after 50 h at 650 °C in air, whereas bare silver agglomerates to 66% transmittance after only 3 min under the same conditions. Therefore 500 Å SiO2 films can be used as long term stabilizers for silver films in oxygen atmospheres with temperatures of up to 650 °C.

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DO - 10.1016/0040-6090(77)90221-8

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SP - 159

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JO - Thin Solid Films

JF - Thin Solid Films

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Silicon dioxide as a high temperature stabilizer for silver films

Abstract

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