Silicon Detector System for High Rate EXAFS Applications

A. Pullia; H. W. Kraner; D. P. Siddons; L. R. Furenlid; G. Bertuccio

doi:10.1109/23.467909

Silicon Detector System for High Rate EXAFS Applications

A. Pullia, H. W. Kraner, D. P. Siddons, L. R. Furenlid, G. Bertuccio

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

Original language	English (US)
Pages (from-to)	585-589
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	42
Issue number	4
DOIs	https://doi.org/10.1109/23.467909
State	Published - Aug 1995
Externally published	Yes

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "Silicon Detector System for High Rate EXAFS Applications",

abstract = "A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.",

author = "A. Pullia and Kraner, {H. W.} and Siddons, {D. P.} and Furenlid, {L. R.} and G. Bertuccio",

note = "Funding Information: * Tlus research w a s~upport4 by the U.S. Department ofEnergy under contract",

year = "1995",

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language = "English (US)",

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pages = "585--589",

journal = "IEEE Transactions on Nuclear Science",

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TY - JOUR

T1 - Silicon Detector System for High Rate EXAFS Applications

AU - Pullia, A.

AU - Kraner, H. W.

AU - Siddons, D. P.

AU - Furenlid, L. R.

AU - Bertuccio, G.

N1 - Funding Information: * Tlus research w a s~upport4 by the U.S. Department ofEnergy under contract

PY - 1995/8

Y1 - 1995/8

N2 - A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

AB - A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at -35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at -35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWHM is achieved and a resolution of 350 eV FWHM (41 rms electrons) is the best performance. A simple cooling system constituted of Peltier cells is sufficient to reduce the reverse currents of the pads and their related shot noise contribution, in order to achieve resolutions better than 300 eV FWHM which is adequate for the EXAFS applications.

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

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ER -

Silicon Detector System for High Rate EXAFS Applications

Abstract

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