Silicon ccd optimized for near infrared (nir) wavelengths

Gary R. Sims; Fabiola Griffin; Michael P. Lesser

doi:10.1117/12.962688

Silicon ccd optimized for near infrared (nir) wavelengths

Gary R. Sims, Fabiola Griffin, Michael P. Lesser

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Improvements in silicon CCD sensitivity in the NIR by using thick, high resistivity epitaxy silicon, backside illumination, and antireflection (AR) coatings are discussed. Quantum efficiencies at 900 nm of up to 42% for frontside illuminated devices and 78% backside illuminated and AR coated devices are reported.

Original language	English (US)
Pages (from-to)	55-60
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1161
DOIs	https://doi.org/10.1117/12.962688
State	Published - Dec 22 1989

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Cite this

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title = "Silicon ccd optimized for near infrared (nir) wavelengths",

abstract = "Improvements in silicon CCD sensitivity in the NIR by using thick, high resistivity epitaxy silicon, backside illumination, and antireflection (AR) coatings are discussed. Quantum efficiencies at 900 nm of up to 42% for frontside illuminated devices and 78% backside illuminated and AR coated devices are reported.",

author = "Sims, {Gary R.} and Fabiola Griffin and Lesser, {Michael P.}",

year = "1989",

month = dec,

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doi = "10.1117/12.962688",

language = "English (US)",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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T1 - Silicon ccd optimized for near infrared (nir) wavelengths

AU - Sims, Gary R.

AU - Griffin, Fabiola

AU - Lesser, Michael P.

PY - 1989/12/22

Y1 - 1989/12/22

N2 - Improvements in silicon CCD sensitivity in the NIR by using thick, high resistivity epitaxy silicon, backside illumination, and antireflection (AR) coatings are discussed. Quantum efficiencies at 900 nm of up to 42% for frontside illuminated devices and 78% backside illuminated and AR coated devices are reported.

AB - Improvements in silicon CCD sensitivity in the NIR by using thick, high resistivity epitaxy silicon, backside illumination, and antireflection (AR) coatings are discussed. Quantum efficiencies at 900 nm of up to 42% for frontside illuminated devices and 78% backside illuminated and AR coated devices are reported.

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EP - 60

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Silicon ccd optimized for near infrared (nir) wavelengths

Abstract

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